Temperature sensor device
View Patent ↗Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.
1. A temperature sensor device comprising:
a plurality of bipolar transistors;
at least one level shift voltage generation circuit coupled in series between an emitter of a first bipolar transistor and a base of a second bipolar transistor,
wherein an output voltage of the temperature sensor device is given based on the forward voltage of PN junctions of the plurality of bipolar transistors and a voltage of the level shift voltage generation circuit.
2. A temperature sensor device according to claim 1 , wherein the voltage of the level shift voltage generation circuit is applied based on a gate-source voltage of a MOS transistor.
3. A temperature sensor device according to claim 1 , wherein the voltage of the level shift voltage generation circuit is applied based on a voltage generated across a resistor.
4. A temperature sensor device according to claim 1 , wherein the voltage of the level shift voltage generation circuit has positive temperature characteristics.