Removing Residues from Substrate Processing Components
Residues are removed from a surface of a substrate processing component which has a polymer coating below the residues. In one version, the component surfaces are contacted with an organic solvent to remove the residues without damaging or removing the polymer coating. The residues can be process residues or adhesive residues. The cleaning process can be conducted as part of a refurbishment process. In another version, the residues are ablated by scanning a laser across the component surface. In yet another version, the residues are vaporized by scanning a plasma cutter across the surface of the component.
1 . A method of ablating adhesive residues from a surface of a substrate processing component, the method comprising:
(a) scanning a laser beam across the surface of the substrate processing component at an energy density that is sufficiently high to ablate the adhesive residues.
2 . A method according to claim 1 , wherein the laser beam has a wattage of from about 9.6.times.10.sup.6 W/cm.sup.2 to about 8.6.times.10.sup.7 W/cm.sup.2.
3 . A method according to claim 1 , wherein the laser beam is a pulsed or continuous wave beam.
4 . A method according to claim 1 , wherein the laser is a CO.sub.2 laser, Nd—YAG laser, Er:Nd—YAG laser, argon laser, high power diode laser or other solid state laser.
5 . A method according to claim 1 , wherein the laser beam has a power range from about 100 Watts to about 5000 Watts.
6 . A method according to claim 1 , wherein the substrate processing component comprises a polymer coating below the adhesive residues, and wherein (a) comprises ablating the polymer coating in addition to ablating the adhesive residues.
7 . A method according to claim 1 , wherein (a) comprises scribing features on the surface of the component in addition to ablating the adhesive residues.
8 . A method according to claim 1 , wherein the substrate processing component comprises a retaining ring or a gas distribution plate.
9 . A method according to claim 1 , wherein the method further comprises removing the adhesive residue by flowing a carrier gas across the surface of the substrate processing component.
10 . A method of refurbishing a substrate processing component comprising a surface comprising adhesive residues over a polymer layer which covers an underlying metal structure, the method comprising: (a) scanning a laser beam across the surface of the substrate processing component at an energy density level that is sufficiently high to ablate the adhesive residues; and (b) forming a new polymer layer on the metal structure.
11 . A method according to claim 10 , wherein the laser beam has a wattage of from about 9.6.times.10.sup.6 W/cm.sup.2 to about 8.6.times.10.sup.7 W/cm.sup.2.
12 . A method according to claim 10 , wherein the laser beam is a pulsed or continuous wave beam.
13 . A method according to claim 10 , wherein the laser is a CO.sub.2 laser, Nd—YAG laser, Er:Nd—YAG laser, argon laser, high power diode laser, or other solid state laser.
14 . A method according to claim 10 , wherein the laser beam has a power range from about 100 Watts to about 5000 Watts.
15 . A method according to claim 10 , wherein the substrate processing component comprises a polymer coating comprising an epoxy layer, and wherein (a) comprises ablating the epoxy layer in addition to the adhesive residues.
16 . A method according to claim 10 , wherein (a) comprises scribing the surface of the metal structure with ablation lines in addition to ablating the adhesive residues.
17 . A method according to claim 10 , wherein the substrate processing component comprises a retaining ring or a gas distribution plate.
18 . A method according to claim 10 , wherein the adhesive residues comprise an acrylic adhesive residue.
19 . A method of cleaning a substrate processing component, the method comprising: (a) contacting a surface of the substrate processing component having residues with a plasma stream; and (b) scanning the plasma stream across the surface of the substrate processing component at a temperature that is sufficiently high to vaporize the residues.
20 . A method according to claim 12 , wherein the plasma stream comprises oxygen or air.