SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

1 . A semiconductor light emitting device comprising:

a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof;

a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer sequentially formed in a direction away from the first main plane;

a first electrode structure disposed on a side of the substrate opposed to the light emitting structure and including a conductive via connected to the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer;

a second electrode structure disposed on the side of the substrate opposed to the light emitting structure and connected to the second conductive semiconductor layer; and

an insulator electrically separating the first electrode structure from the second conductive semiconductor layer, the active layer, and the second electrode structure.

2 . The semiconductor light emitting device of claim 1 , wherein a plurality of conductive vias are provided, and the insulator is formed to fill the regions between the plurality of conductive vias and the light emitting structure.

3 . The semiconductor light emitting device of claim 1 , wherein the first and second electrode structures are formed to face the same direction.

4 . The semiconductor light emitting device of claim 1 , further comprising a first electrode pad connected to the conductive vias.

5 . The semiconductor light emitting device of claim 1 , further comprising a second electrode pad formed on an upper surface of the second conductive semiconductor layer.

6 . The semiconductor light emitting device of claim 1 , wherein the light-transmissive substrate is an insulating substrate.

7 . The semiconductor light emitting device of claim 1 , wherein the prominences and depressions formed on the light-transmissive substrate include a convex portion with a sloped lateral face.

8 . The semiconductor light emitting device of claim 1 , wherein the first and second conductive semiconductor layers are n-type and p-type semiconductor layers, respectively.

9 . A method for fabricating a semiconductor light emitting device, the method comprising:

preparing a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof;

forming a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially stacked on a prominence and depression surface of the substrate;

etching portions of the second conductive semiconductor layer and the active layer to expose at least a portion of the first conductive semiconductor layer;

forming a first electrode structure including conductive vias electrically connected to the first conductive semiconductor layer on the etched region;

forming a second electrode structure electrically connected to the second conductive semiconductor layer on the second conductive semiconductor layer; and

forming an insulator to electrically separate the first electrode structure from the second conductive semiconductor layer, the active layer, and the second electrode structure.

10 . The method of claim 9 , wherein the conductive vias are formed to penetrate the second conductive semiconductor layer and the active layer.

11 . The method of claim 9 , wherein, in the forming of the insulator, the insulator is formed to fill the etched regions formed between the conductive vias and the light emitting structure.

12 . The method of claim 9 , wherein the prominences and depressions formed on at least one of the first and second main planes include a convex portion with a sloped lateral face, and at least a portion of the first conductive semiconductor layer is grown from the lateral face of the convex portion.

13 . The method of claim 9 , further comprising forming an insulator to cover the surface of the light emitting structure, before forming the conductive vias.