Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof
View Patent ↗A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.
1. A semiconductor imaging instrument comprising:
a prescribed substrate;
an imaging device array produced on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light;
a color filter layer provided on the imaging device array; and
an infrared light absorbing dye being contained in the color filter layer,
wherein a cyanine based dye which is configured by the following formula is used as the infrared light absorbing dye material:
2. The semiconductor imaging instrument according to claim 1 , wherein the color filter layer comprises a mixture in which a visible light absorbing dye material and the infrared light absorbing dye material are dispersed in a prescribed proportion.
3. An electronic apparatus comprising the semiconductor imaging instrument according to claim 1 .
4. The electronic apparatus according to claim 3 , wherein the electronic apparatus is a camera.
5. The semiconductor imaging instrument according to claim 1 , wherein a flattening film is provided between each of the semiconductor imaging devices and the color filter.
6. The semiconductor imaging instrument according to claim 5 , wherein the color filter is formed on each of the flattening films.
7. The semiconductor imaging instrument according to claim 1 , wherein the color filter is provided between each of the semiconductor imaging devices and an on-chip lens corresponding to each of the semiconductor imaging devices.
8. The semiconductor imaging instrument according to claim 1 , wherein each of the on-chip lenses is formed on the color filter.
9. The semiconductor imaging instrument according to claim 1 , wherein the infrared light absorbing dye contains 25 wt % of the infrared light absorbing dye material.
10. The semiconductor imaging instrument according to claim 1 , wherein the infrared light absorbing dye contains 25 wt % of a visible light absorbing dye material.
11. The semiconductor imaging instrument according to claim 9 , wherein the infrared light absorbing dye contains 25 wt % of a visible light absorbing dye material.
12. The semiconductor imaging instrument according to claim 1 , wherein R and R′ are each (CH 3 ) 2 .
13. The semiconductor imaging instrument according to claim 1 , wherein X − represents a halogen anion.
14. The semiconductor imaging instrument according to claim 13 , wherein X − is ClO 4 − .
15. The semiconductor imaging instrument according to claim 1 , wherein n is equal to 0.
16. The semiconductor imaging instrument according to claim 1 , wherein n is equal to 1.
17. The semiconductor imaging instrument according to claim 1 , wherein n is equal to 2.