Light emitting device with trenches and a top contact
View Patent ↗A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
1. A device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a bottom contact disposed on a bottom surface of the semiconductor structure, wherein the bottom contact is electrically connected to one of the n-type region and the p-type region;
a top contact disposed on a top surface of the semiconductor structure, wherein the top contact is electrically connected to the other of the n-type region and the p-type region;
a trench formed in the semiconductor structure, wherein the trench extends through the light emitting layer;
a conductive material disposed in a bottom of the trench; and
a dielectric layer disposed on the conductive material, wherein the semiconductor structure and the dielectric layer completely encapsulate the conductive material.
2. The device of claim 1 further comprising a reflective material disposed in the trench, wherein the reflective material is electrically isolated from the conductive material by the dielectric layer.
3. The device of claim 1 further comprising a variation in index of refraction in a direction parallel to a top surface of the semiconductor structure, wherein the variation in index of refraction is disposed within the semiconductor structure or on a surface of the semiconductor structure.
4. The device of claim 1 wherein the trench is aligned with at least a portion of an edge of the top contact.
5. The device of claim 4 wherein in an area adjacent to a portion of the trench that is aligned with at least a portion of an edge of the top contact, an insulating layer is disposed between the bottom contact and the light emitting layer such that no current is injected in a portion of the light emitting layer beneath the top contact.
6. The device of claim 1 wherein the trench surrounds the top contact.
7. The device of claim 1 wherein the light emitting layer is a III-nitride material.
8. The device of claim 1 wherein the light emitting layer is AlInGaP.