IP Library Granted Patent US 8,575,031
Granted Patent B2
US 8,575,031 · App. 13/349,487 · Granted Nov 5, 2013

Method of forming a fine pattern, display substrate, and method of manufacturing the same using the method of forming a fine pattern

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Quick Facts
Patent No.
US 8,575,031
App. No.
13/349,487
Granted
Nov 5, 2013
Kind
B2
Abstract

A method is provided for forming a fine pattern. In the method, a first fine pattern and a first metal pattern are formed by respectively patterning a first fine pattern layer on a base substrate and a first metal layer on the first fine pattern layer. A second fine pattern layer and a second metal layer are sequentially formed over the first fine pattern and the first metal pattern. The second metal layer is patterned, so that a second metal pattern between adjacent portions of the first fine pattern. The second fine pattern layer is patterned using the second metal pattern as a mask, so that a second fine pattern is formed between adjacent portions of the first fine pattern.

Claims (67)

1. A method of forming a fine pattern, the method comprising:

forming a first fine pattern and a first metal pattern by respectively patterning a first fine pattern layer formed on a base substrate and a first metal layer on the first fine pattern layer;

sequentially forming a second fine pattern layer and a second metal layer on the base substrate and over the first fine pattern and the first metal pattern;

patterning the second metal layer to form a second metal pattern between adjacent portions of the first fine patterns; and

patterning the second fine pattern layer using the second metal pattern as an etch stop pattern, so as to form a second fine pattern between the adjacent portions of the first fine patterns.

2. The method of claim 1 , wherein the forming a first fine pattern and a first metal pattern further comprises:

sequentially forming the first fine pattern layer and the first metal layer on the base substrate;

forming a first photoresist pattern on the first metal layer;

patterning the first metal layer using the first photoresist pattern, so as to form a first metal pattern; and

forming the first fine pattern using the first metal pattern as an etch stop pattern.

3. The method of claim 2 , wherein the forming a first photoresist pattern further comprises:

forming a first photoresist layer on the first metal layer;

positioning a mask over the first photoresist layer, the mask having a transmissive portion and a blocking portion, at least one of the transmissive portion and the blocking portion having a first width;

exposing the first photoresist layer to light through the transmissive portion;

shifting the mask by a second width smaller than the first width;

exposing the first photoresist layer to light through the shifted transmissive portion; and

developing the first photoresist layer to form the first photoresist pattern.

4. The method of claim 1 , wherein the sequentially forming a second fine pattern layer and a second metal layer comprises:

forming the second fine pattern layer with recesses between adjacent ones of the first fine patterns; and

forming the second metal layer on the second fine pattern layer.

5. The method of claim 4 , wherein the patterning the second metal layer further comprises:

depositing a second photoresist pattern in the recesses; and

patterning the second metal layer using the second photoresist pattern, so as to form the second metal pattern.

6. The method of claim 4 , wherein the patterning the second metal layer further comprises:

forming a second photoresist layer on the second metal layer;

patterning the second photoresist layer to form a second photoresist pattern in the recesses; and

patterning the second metal layer using the second photoresist pattern, so as to form the second metal pattern.

7. The method of claim 1 , wherein the sequentially forming a second fine pattern layer and a second metal layer further comprises:

forming the second fine pattern layer having a same thickness as a thickness of the first fine pattern layer.

8. The method of claim 1 , wherein the sequentially forming a second fine pattern layer and a second metal layer further comprises:

forming the second fine pattern layer having a thickness greater than that of the first fine pattern layer.

9. The method of claim 1 , further comprising removing the first and second metal patterns.

10. A display substrate, comprising:

a base substrate;

a polarizing layer on the base substrate and configured to polarize light, the polarizing layer having a first fine pattern extending in a first direction, a second fine pattern having portions disposed between adjacent portions of the first fine patterns and extending in the first direction, and a polymer pattern filling a space between the first and second fine patterns;

a switching element connected to a data line and a gate line that are formed on the polarizing layer; and

a pixel electrode connected to the switching element.

11. The display substrate of claim 10 , wherein the first and second fine patterns each have widths of about 1 μm, and a space between adjacent ones of the portions of the first and second fine patterns has a width of about 1 μm.

12. The display substrate of claim 10 , further comprising a protecting layer formed on the polarizing layer and protecting the polarizing layer,

wherein the protecting layer is an organic layer.

13. A method of manufacturing a display substrate, the method comprising:

forming a polarizing layer on a base substrate, the polarizing layer including a first fine pattern extending in a first direction, a second fine pattern having portions disposed between adjacent portions of the first fine pattern and extending in the first direction, and a polymer pattern filling a space between the first and second fine patterns;

patterning a gate metal layer and a data metal layer that are formed over the polarizing layer, so as to form a gate line, a data line and a switching element connected to the gate line and the data line; and

patterning a pixel electrode layer formed over the switching element, so as to form a pixel electrode connected to the switching element.

14. The method of claim 13 , wherein the forming a polarizing layer further comprises:

patterning a first fine pattern layer formed on the base substrate and a first metal layer positioned on the first fine pattern layer, so as to form the first fine pattern and a first metal pattern;

sequentially forming a second fine pattern layer and a second metal layer on the base substrate over the first metal pattern;

patterning the second metal layer to form a second metal pattern positioned between adjacent portions of the first fine pattern;

patterning the second fine pattern layer using the second metal pattern as an etch stop pattern, so as to form the second fine pattern; and

forming the polymer pattern in a space between the portions of the first and second fine patterns.

15. The method of claim 14 , wherein the sequentially forming a second fine pattern layer and a second metal layer further comprises:

forming the second fine pattern layer with recesses positioned between adjacent portions of the first fine patterns; and

forming the second metal layer on the second fine pattern layer.

16. The method of claim 15 , wherein the patterning the second metal layer further comprises:

forming a second photoresist pattern in the recesses; and

patterning the second metal layer using the second photoresist pattern, so as to form the second metal pattern.

17. The method of claim 15 , wherein the patterning the second metal layer further comprises:

forming a second photoresist layer on the second metal layer;

patterning the second photoresist layer to form a second photoresist pattern in the recesses; and

patterning the second metal layer using the second photoresist pattern, so as to form the second metal pattern.

18. The method of claim 14 , wherein the sequentially forming a second fine pattern layer and a second metal layer further comprises:

forming the second fine pattern layer having a thickness equal to or greater than that of the first fine pattern layer.

19. The method of claim 14 , wherein the forming the polymer pattern further comprises:

depositing a polymer in a space between the portions of the first and second fine patterns; and

applying heat to the base substrate.

20. The method of claim 13 , further comprising:

forming a protecting layer on the polarizing layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0926 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2012
From: YU, SE-HWAN; CHANG, CHONG-SUP; PARK, SANG-HO; LEE, JI-SEON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 027526/0282 →