Method for fabricating active device array substrate

1. A method for fabricating an active device array substrate, comprising:

forming a first patterned semiconductor layer, a gate insulator, a first patterned conductive layer, and a first dielectric layer on a substrate, wherein the gate insulator covers the first patterned semiconductor layer, the first patterned conductive layer is disposed on the gate insulator, and the first dielectric layer is disposed on the gate insulator to cover the first patterned conductive layer;

forming a plurality of first contact holes exposing the first patterned semiconductor layer in the first dielectric layer and the gate insulator;

forming a second patterned conductive layer on the first dielectric layer and a second patterned semiconductor layer disposed on the second patterned semiconductor layer simultaneously, wherein the second patterned conductive layer comprises a plurality of contact conductors and a bottom electrode, and the second patterned semiconductor layer comprises an active layer disposed on the bottom electrode;

forming a second dielectric layer on the first dielectric layer;

forming a plurality of second contact holes in the second dielectric layer, wherein a portion of the second contact holes exposes the active layer; and

forming a third patterned conductive layer on the second dielectric layer, wherein a portion of the third patterned conductive layer is electrically connected to the active layer through a portion of the second contact holes.

2. The method for fabricating the active device array substrate according to claim 1 , wherein a method for forming the first patterned semiconductor layer comprises:

forming a plurality of island patterns on the substrate; and

forming a plurality of first type doping regions and a plurality of second type doping regions in the island patterns.

3. The method for fabricating the active device array substrate according to claim 2 , wherein a contact interface is disposed between a portion of the first type doping regions and a portion of the second type doping regions, and a portion of the first contact holes exposes the contact interface.

4. The method for fabricating the active device array substrate according to claim 3 , wherein the first type doping regions are P-type doping regions, and the second type doping regions are N-type doping regions, and wherein the P-type doping regions comprise a P-type heavily doping region, and the N-type doping regions comprise an N-type heavily doping region and an N-type lightly doping region.

5. The method for fabricating the active device array substrate according to claim 1 , wherein a method for forming the second patterned conductive layer and the second patterned semiconductor layer comprises:

forming a second conductive layer and a second semiconductor layer on the first dielectric layer sequentially; and

patterning the second conductive layer and the second semiconductor layer to form the bottom electrode and the active layer on the first dielectric layer and to form the contact conductors in at least a portion of the first contact holes.

6. The method for fabricating the active device array substrate according to claim 1 , further comprising:

forming a plurality of third contact holes exposing the first patterned conductive layer in the first dielectric layer at the same time of forming the first contact holes, wherein a portion of the second contact holes are disposed above the first contact holes and the third contact holes.

7. The method for fabricating the active device array substrate according to claim 6 , wherein a method for forming the second patterned conductive layer and the second patterned semiconductor layer comprises:

forming a second conductive layer and a second semiconductor layer on the first dielectric layer sequentially; and

patterning the second conductive layer and the second semiconductor layer to form the bottom electrode and the active layer on the first dielectric layer and forming the contact conductors in the first contact holes and a portion of the third contact holes.

8. The method for fabricating the active device array substrate according to claim 1 , wherein the third patterned conductive layer is electrically connected to the first patterned semiconductor layer through a portion of the second contact holes and the second patterned conductive layer.

9. The method for fabricating the active device array substrate according to claim 1 , wherein a method for forming the second patterned conductive layer and the second patterned semiconductor layer comprises:

sequentially forming a second conductive layer, a second semiconductor layer and a patterned photoresist layer on the first dielectric layer, wherein the patterned photoresist layer covers a portion of the second semiconductor layer, the patterned photoresist layer comprises a first block and a second block, a thickness of the first block is greater than that of the second block, and the first block is correspondingly disposed over the active layer; and

patterning the second conductive layer and the second semiconductor layer to form the bottom electrode, the active layer and the contact conductors by using the patterned photoresist layer as a mask.

10. The method for fabricating the active device array substrate according to claim 1 , wherein the second patterned semiconductor layer further comprises a plurality of dummy semiconductor layers disposed on the contact conductors.

11. The method for fabricating the active device array substrate according to claim 10 , wherein sizes of the dummy semiconductor layers are smaller than or equal to that of the contact conductors.

12. The method for fabricating the active device array substrate according to claim 10 , wherein a method for forming the second patterned conductive layer and the second patterned semiconductor layer comprises:

forming a second conductive layer, a second semiconductor layer, and a patterned photoresist layer on the first dielectric layer sequentially;

patterning the second conductive layer and the second semiconductor layer to form the bottom electrode, the active layer, the contact conductors, and the dummy semiconductor layers by using the patterned photoresist layer as a mask; and

performing a lateral etching process on the active layer and the dummy semiconductor layer, so that sizes of the dummy semiconductor layers are smaller than that of the contact conductors, and size of the active layer is smaller than sizes of the bottom electrodes.

13. The method for fabricating the active device array substrate according to claim 1 , wherein a method for forming the second contact holes in the second dielectric layer comprises:

forming a photoresist layer on the second dielectric layer, wherein the patterned photoresist layer covers a portion of the second semiconductor layer, the patterned photoresist layer comprises a first block and a second block, a thickness of the first block is greater than that of the second block, and the second block is correspondingly disposed over the active layer; and

patterning the second dielectric layer to form the second contact holes by using the patterned photoresist layer as a mask.

14. The method for fabricating the active device array substrate according to claim 1 , wherein a method for forming the second contact holes in the second dielectric layer comprises:

forming a photoresist layer on the second dielectric layer, wherein the patterned photoresist layer covers a portion of the second semiconductor layer, the patterned photoresist layer comprises a first block and a second block, a thickness of the first block is greater than that of the second block, and the second block is correspondingly disposed over the active layer; and

patterning the second dielectric layer to form the second contact holes.

15. The method for fabricating the active device array substrate according to claim 1 , wherein a portion of the third patterned conductive layer is electrically connected to the first patterned conductive layer in an indirect manner through the third contact holes and the second patterned conductive layer in the second contact holes.

16. The method for fabricating the active device array substrate according to claim 1 , further comprising:

forming a first light-shielding layer on the substrate at the same time of forming the first patterned semiconductor layer.

17. The method for fabricating the active device array substrate according to claim 1 , further comprising:

forming a second light-shielding layer on the gate insulator at the same time of forming the first patterned conductive layer.

18. A method for fabricating an active device array substrate, comprising:

forming a first patterned semiconductor layer and a gate insulator on a substrate, wherein the gate insulator covers the first patterned semiconductor layer;

simultaneously forming a first patterned conductive layer and a second patterned semiconductor layer disposed thereon on the gate insulator, wherein the first patterned conductive layer comprises a plurality of gates and a bottom electrode, and the second patterned semiconductor layer comprises an active layer disposed on the bottom electrode;

forming a first dielectric layer on the gate insulator to cover the first patterned conductive layer;

forming a plurality of first contact holes, in the first dielectric layer and the gate insulator, to expose the first patterned semiconductor layer;

forming a second patterned semiconductor layer on the first dielectric layer, wherein the second patterned conductive layer comprises a plurality of contact conductors in the first contact holes;

forming a second dielectric layer on the first dielectric layer;

forming a plurality of second contact holes in the second dielectric layer, wherein a portion of the second contact holes is disposed over the active layer;

forming a third contact hole in the first dielectric layer; and

forming a third patterned conductive layer on the second dielectric layer, wherein a portion of the third patterned conductive layer is electrically connected to the active layer through a portion of the second contact holes and the third contact hole.

19. The method for fabricating the active device array substrate according to claim 18 , wherein the step of forming the first patterned semiconductor layer comprises:

forming a plurality of island patterns on the substrate; and

forming a plurality of first type doping regions and a plurality of second type doping regions in the island patterns.

20. The method for fabricating the active device array substrate according to claim 19 , wherein a contact interface is disposed between a portion of the first type doping regions and a portion of the second type doping regions, and a portion of the first contact holes exposes the contact interface.

21. The method for fabricating the active device array substrate according to claim 18 , wherein the step of forming the first patterned conductive layer and the second patterned semiconductor layer comprises:

forming a first conductive layer and a second semiconductor layer on the gate insulator sequentially; and

patterning the first conductive layer and the second semiconductor layer to form the bottom electrode and the active layer on the gate insulator.

22. The method for fabricating the active device array substrate according to claim 21 , wherein a portion of the third patterned conductive layer is electrically connected to the first patterned semiconductor layer in a direct manner through the first contact holes and the second contact holes.

23. The method for fabricating the active device array substrate according to claim 18 , further comprising:

forming a plurality of third contact holes exposing the first patterned conductive layer in the first dielectric layer at the same time of forming the first contact holes, wherein a portion of the second contact holes are disposed over the first contact holes and the third contact holes.

24. The method for fabricating the active device array substrate according to claim 23 , wherein a portion of the third patterned conductive layer is electrically connected to the first patterned conductive layer through the second contact holes and the second patterned conductive layer in the third contact holes.

25. The method for fabricating the active device array substrate according to claim 18 , wherein the third patterned conductive layer is electrically connected to the first patterned semiconductor layer through a portion of the second contact holes and the second patterned conductive layer.

26. The method for fabricating the active device array substrate according to claim 18 , wherein the step of forming the first patterned conductive layer and the second patterned semiconductor layer comprises:

sequentially forming a first conductive layer, a second semiconductor layer and a patterned photoresist layer on the gate insulator, wherein the patterned photoresist layer covers a portion of the second semiconductor layer, the patterned photoresist layer comprises a first block and a second block, a thickness of the first block is greater than that of the second block, and the first block is correspondingly disposed over the active layer; and

patterning the first conductive layer and the second semiconductor layer to form the bottom electrode, the active layer, the gates, and the dummy semiconductor layers by using the patterned photoresist layer as a mask.

27. The method for fabricating the active device array substrate according to claim 18 , wherein the second patterned semiconductor layer further comprises a plurality of dummy semiconductor layers disposed on the gates.

28. The method for fabricating the active device array substrate according to claim 27 , wherein sizes of the dummy semiconductor layers are smaller than or equal to that of the contact conductors.

29. The method for fabricating the active device array substrate according to claim 27 , wherein the step of forming the first patterned conductive layer and the second patterned semiconductor layer comprises:

forming a first conductive layer, a second semiconductor layer, and a patterned photoresist layer on the gate insulator sequentially;

patterning the first conductive layer and the second semiconductor layer to form the bottom electrode, the active layer, the gates, and the dummy semiconductor layers by using the patterned photoresist layer as a mask; and

performing a lateral etching process on the active layer and the dummy semiconductor layer, so that sizes of the dummy semiconductor layers are smaller than sizes of the gates, and size of the active layer is smaller than sizes of the bottom electrodes.

30. The method for fabricating the active device array substrate according to claim 18 , further comprising:

forming a first light-shielding layer on the substrate at the same time of forming the first patterned semiconductor layer.