Laser liftoff structure and related methods
Light-emitting devices, and related components, systems, and methods associated therewith are provided.
1. A method of making a light emitting device, the method comprising:
providing a first multi-layer stack, comprising:
a substrate,
a submount,
a high bandgap buffer region between the substrate and the submount, wherein the buffer region includes a dislocation reduction region wherein the first multi-layer stack includes an n-doped region formed directly on the buffer region; and
a sacrificial portion between the buffer region and the submount wherein the n-doped region comprises the sacrificial portion; and
exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion; and
removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack,
wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.
2. The method of claim 1 , wherein the dislocation reduction region has a varying composition across a thickness of the region.
3. The method of claim 1 , wherein the electromagnetic radiation has a wavelength of smaller than 250 nm.
4. The method of claim 1 , wherein the buffer region further comprises an AlN layer.
5. The method of claim 1 , wherein the n-doped region is less than 1000 nm thick.
6. The method of claim 1 , wherein the n-doped region is less than 500 nm thick.
7. The method of claim 1 , wherein the second multi-layer stack comprises the n-doped region at an upper surface of the second multi-layer stack.
8. The method of claim 1 , wherein the multilayer stack comprises a light generating region.
9. The method of claim 1 , wherein the sacrificial portion comprises a semiconductor material.
10. The method of claim 1 , wherein the decomposing the sacrificial portion comprises forming a gas and a liquid.
11. The method of claim 1 , wherein the substrate is formed of AlN.