IP Library Granted Patent US 9,136,422
Granted Patent B1
US 9,136,422 · App. 13/354,175 · Granted Sep 15, 2015

Texturing a layer in an optoelectronic device for improved angle randomization of light

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Quick Facts
Patent No.
US 9,136,422
App. No.
13/354,175
Granted
Sep 15, 2015
Kind
B1
Abstract

Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Claims (28)

1. A method for providing a textured layer in a photovoltaic device, the method comprising:

sequentially performing the steps of:

depositing a first layer of a first material on a substrate;

then depositing an island layer of a second material on the first layer, the depositing of the island layer including:

forming one or more islands of the second material to provide at least one textured surface of the island layer, wherein the at least one textured surface is operative to cause scattering of light;

then depositing a third layer of a third material, wherein the third layer further comprises any of a dielectric layer, a semiconductor contact layer, a transparent conductive oxide layer and a combination thereof; and

then lifting the device off the substrate, such that after the lift off the first layer is closer than the island layer to a light facing side of the device; wherein the device comprises the first layer, the island layer and the third layer.

2. The method of claim 1 wherein the one or more islands are formed using a Stranski-Krastanov process.

3. The method of claim 1 wherein the one or more islands are formed using a Volmer-Weber process.

4. The method of claim 1 wherein the second material is transparent.

5. The method of claim 1 further comprising depositing a metal reflective layer over the third layer.

6. The method of claim 5 , wherein the dielectric layer is provided with apertures allowing a conductive contact between the metal reflective layer and the semiconductor contact layer or the island layer.

7. The method of claim 5 wherein the textured layer is a back reflector layer positioned further from the front of the photovoltaic device than a p-n junction of the photovoltaic device.

8. The method of claim 1 further comprising depositing an anti-reflective coating on the island layer.

9. The method of claim 1 wherein the formation of the one or more islands is controlled at least in part by a lattice mismatch between the first material and the second material.

10. The method of claim 1 wherein the one or more islands include a plurality of islands, and wherein the plurality of islands have variable dimensions relative to each other, such that the textured surface causes light photons to scatter at randomized angles.

11. The method of claim 1 wherein the second material is a semiconductor and includes at least one of the group consisting of: gallium, aluminum, indium, phosphorus, nitrogen, and arsenic.

12. The method of claim 1 wherein the second material has a larger band gap than the first material.

13. The method of claim 1 wherein depositing the third layer of a third material further comprises:

sequentially depositing a semiconductor contact layer over the island layer; and depositing a dielectric layer over the semiconductor contact layer.

14. A textured layer in a photovoltaic device, the textured layer fabricated using the process of claim 1 .

15. A method for providing an photovoltaic device, the method comprising:

sequentially depositing an absorber layer;

then depositing an emitter layer;

then depositing a first layer of a first material over the emitter layer and the absorber layer;

then depositing an island layer of a second material on the first layer, including forming one or more islands of the second material during the deposition of the island layer to provide at least one textured surface operative to cause scattering of light; depositing a dielectric layer over the island layer; and

then depositing a metal layer over the dielectric layer; and

then lifting the device off the substrate, such that after the lift off the first layer is closer than the island layer to a light facing side of the device; wherein the device comprises the first layer, the island layer and the third layer.

Assignments (11)
SECURITY INTEREST Recorded Aug 28, 2023
From: UTICA LEASECO, LLC
To: TIGER FINANCE, LLC
Reel/Frame 064731/0814 →
CORRECTIVE ASSIGNMENT TO CORRECT THE THE ASSIGNEE ADDRESS PREVIOUSLY RECORDED AT REEL: 055766 FRAME: 0279. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Aug 9, 2021
From: UTICA LEASECO, LLC SECURED PARTY
To: UTICA LEASECO, LLC ASSIGNEE
Reel/Frame 057117/0811 →
CONFIRMATION OF FORECLOSURE TRANSFER OF PATENT RIGHTS Recorded Feb 25, 2021
From: UTICA LEASECO, LLC SECURED PARTY
To: UTICA LEASECO, LLC ASSIGNEE
Reel/Frame 055766/0279 →
SECURITY INTEREST Recorded Apr 29, 2019
From: ALTA DEVICES, INC.
To: UTICA LEASECO, LLC
Reel/Frame 049027/0944 →
RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS) Recorded Mar 10, 2017
From: SILICON VALLEY BANK, AS COLLATERAL AGENT
To: AWBSCQEMGK, INC. (F/K/A ALTA DEVICES, INC.)
Reel/Frame 041942/0286 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2016
From: HANERGY GLOBAL INVESTMENT AND SALES PTE. LTD
To: ALTA DEVICES, INC.
Reel/Frame 038066/0958 →
CHANGE OF NAME Recorded Mar 4, 2016
From: HANERGY ACQUISITION SUB INC.
To: ALTA DEVICES, INC.
Reel/Frame 038006/0457 →
CHANGE OF NAME Recorded Mar 4, 2016
From: ALTA DEVICES, INC.
To: AWBSCQEMGK, INC.
Reel/Frame 038005/0990 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2016
From: ALTA DEVICES, INC.
To: HANERGY GLOBAL INVESTMENT AND SALES PTE. LTD.
Reel/Frame 038004/0078 →
SECURITY AGREEMENT Recorded Apr 10, 2013
From: ALTA DEVICES, INC.
To: SILICON VALLEY BANK, AS AGENT
Reel/Frame 030192/0391 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: HIGASHI, GREGG; KAYES, BRENDAN M.; REINHARDT, FRANK; SPRYUTTE, SYLVIA
To: ALTA DEVICES, INC.
Reel/Frame 027563/0620 →