Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
1. A light emitting device, comprising:
a gallium oxide based substrate;
a first conductivity-type semiconductor layer on the gallium oxide based substrate;
an active layer on the first conductivity-type semiconductor layer; and
a second conductivity-type semiconductor layer on the active layer,
wherein the gallium oxide based substrate contains first conductivity-type impurities.
2. The light emitting device according to claim 1 , further comprising a gallium oxynitride based layer on the gallium oxide based substrate.
3. The light emitting device according to claim 2 , wherein the gallium oxynitride based layer and the gallium oxide based substrate contain the same conductivity-type impurities.
4. The light emitting device according to claim 2 , wherein the gallium oxynitride based layer comprises the first conductivity-type impurities.
5. The light emitting device according to claim 1 , further comprising:
a first electrode layer under the gallium oxide based substrate; and
a second electrode layer on the second conductivity-type semiconductor layer.
6. The light emitting device according to claim 1 , wherein the first conductivity-type semiconductor layer comprises a gallium nitride based layer containing n-type impurities.
7. The light emitting device according to claim 1 , wherein the second conductivity-type semiconductor layer comprises a gallium nitride based layer containing p-type impurities.
8. The light emitting device according to claim 1 , wherein the active layer comprises a gallium nitride based layer.
9. The light emitting device according to claim 1 , wherein the active layer is an indium-containing gallium nitride based layer.
10. The light emitting device according to claim 1 , wherein a surface of the gallium oxide based substrate is essentially free of scratches.
11. The light emitting device according to claim 1 , wherein the gallium oxide based substrate is formed by performing a thermal treatment on the gallium oxide based substrate in an oxygen atmosphere.
12. A light emitting device, comprising:
a gallium oxide based substrate;
a gallium oxynitride based layer on the gallium oxide based substrate; and
a first conductivity-type semiconductor layer on the gallium oxynitride based layer,
wherein the gallium oxynitride based layer and the gallium oxide based substrate contain the same conductivity-type impurities.
13. The light emitting device according to claim 12 , further comprising an active layer on the first conductivity-type semiconductor layer; and
a second conductivity-type semiconductor layer on the active layer.
14. The light emitting device according to claim 13 , wherein the second conductivity-type semiconductor layer comprises a gallium nitride based layer containing p-type impurities.
15. The light emitting device according to claim 12 , wherein the gallium oxynitride based layer comprises first conductivity-type impurities.
16. The light emitting device according to claim 12 , wherein the gallium oxide based substrate contains first conductivity-type impurities.
17. The light emitting device according to claim 12 , wherein the first conductivity-type semiconductor layer comprises a gallium nitride based layer containing n-type impurities.
18. The light emitting device according to claim 12 , wherein a surface of the gallium oxide based substrate is essentially free of scratches.
19. The light emitting device according to claim 12 , wherein the gallium oxide based substrate is formed by performing a thermal treatment on the gallium oxide based substrate in an oxygen atmosphere.