Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device
View Patent ↗A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.
1. A solid-state imaging device comprising:
a semiconductor layer formed on a pinning layer, the semiconductor layer including a pixel unit and a peripheral circuit unit formed in a periphery of the pixel unit, the pixel unit having a photoelectric conversion unit configured to convert incident light into an electric signal; and
a wiring section disposed between the semiconductor layer and a support substrate,
wherein the pinning layer is a P-type semiconductor layer or an N-type semiconductor layer formed by deposition,
the P-type semiconductor layer or the N-type semiconductor layer is a lager epitaxially grown on an other substrate, and
the P-type semiconductor layer or the N-type semiconductor layer have a thickness equal to or less than the critical thickness and lattice-matches the other substrate.
2. The solid-state imaging device according to claim 1 , wherein the P-type semiconductor layer or the N-type semiconductor layer is P-type silicon or N-type silicon.
3. The solid-state imaging device according to claim 2 , wherein a P-type impurity is boron and an N-type impurity is phosphorus, arsenic, or antimony.
4. The solid-state imaging device according to claim 2 , wherein the P-type semiconductor layer or the N-type semiconductor layer contains germanium or carbon.
5. The solid-state imaging device according to claim 1 , wherein the P-semiconductor layer or N-type semiconductor layer is formed with a chalcopyrite compound semiconductor composed of a P-type CuGaInS mixed crystal or an N-type CuGaInS mixed crystal.
6. The solid-state imaging device according to claim 1 , wherein the P-semiconductor layer or N-type semiconductor layer is formed of a compound semiconductor including P-type SiGeC or N-type SiGeC.
7. The solid-state imaging device according to claim 1 , wherein the support substrate is bonded on the wiring section.
8. The solid-state imaging device according to claim 1 , wherein the other substrate has been removed by grinding, polishing, or etching.
9. The solid-state imaging device according to claim 1 , wherein the semiconductor layer is configured to receive the incident light through the pinning layer.
10. The solid-state imaging device according to claim 1 , further comprising a color filter formed on a side of the pinning layer opposite from the semiconductor layer.
11. The solid-state imaging device according to claim 10 , further comprising a condenser lens formed on a side of the color filter opposite from the pinning layer.
12. The solid-state imaging device according to claim 11 , wherein the other substrate has been removed by grinding, polishing, or etching.