Laser package having multiple emitters configured on a substrate member

1. A laser device comprising:

a substrate containing gallium and nitrogen material, the substrate having a surface region characterized by a semipolar or nonpolar orientation, the substrate having a front edge and a back edge;

one or more active regions positioned within the substrate;

an array of N laser emitters overlaying the one or more active regions, N being greater than 3, the array of N laser emitters extending substantially from the front edge of the substrate to the back edge of the substrate, each of the N laser emitters being configured to emit a blue or green laser at the front edge of the substrate, the array of N laser emitters being characterized by an average operating power of at least 25 mW, each of the N laser emitters being characterized by a length and a width, the length being 400 um to 800 um, the width being 1 um to 3 um, and edges of each of the N laser emitters extending substantially parallel to one another along the entire length of the N laser emitters;

a common n-side electrode coupled to a bottom side of the substrate;

a common p-side electrode coupled to the array of N laser emitters, the common n-side electrode and the common p-side electrode electrically coupling the array of N laser emitters to one another in a parallel configuration;

one or more optical members positioned at the front edge of the substrate for optically collimating radiation from the array of N laser emitters to provide a laser output having a spectral width of at least 4 nm and a total operating power of at least 0.5 W; and

a heat sink thermally coupled to the first substrate.

2. The device of claim 1 further comprising a second substrate stacked on a top of the first substrate.

3. The device of claim 1 further comprising a second substrate stacked by a side of the first substrate.

4. A laser device comprising:

a substrate containing gallium and nitrogen material, the substrate having a surface region characterized by a semipolar or nonpolar orientation, the substrate having a top side and a bottom side opposite the top side, and a front edge and a back edge opposite the front edge;

an N number of active regions positioned near the top side of the first substrate, N being greater than 3, each of the active regions comprises a doped region associated with a p type;

an array of N laser emitters overlaying the doped regions, each of the N laser emitters being configured to emit a blue or green laser at the front edge of the substrate, the array of N laser emitters being characterized by an average operating power of at least 25 mW, each of the N laser emitters being characterized by a length and a width, the length being at least 400 um, the width being 1 um to 3 um, and edges of each of the N laser emitters extending substantially parallel to one another along the entire length of the N laser emitters;

a common n-side electrode coupled to the bottom side of the substrate;

a common p-side electrode coupled to the array of N laser emitters, the common n-side electrode and the common p-side electrode electrically coupling the array of N laser emitters to one another in a parallel configuration;

one or more optical members positioned at the front edge of the substrate for optically collimating radiation from the array of N laser emitters to provide a laser output having a spectral width of at least 4 nm and a total operating power of at least 0.5 W; and

a submount characterized by a thermal emissivity of at least 0.6.

5. The device of claim 4 wherein the submount comprises diamond material or copper tungsten alloy material or beryllium oxide material.

6. The device of claim 4 wherein the surface region is characterized by a {11-22}, {20-21}, or {30-31} plane or within +/−5 degrees from one of these planes.

7. The device of claim 4 wherein the submount is directly coupled to the top side of the substrate.

8. The device of claim 4 wherein the submount is directly coupled to the bottom side of the substrate.

9. The device of claim 4 wherein the submount is directly coupled to the array of N laser emitters; wherein the one or more optical members comprises a collimating lens.

10. The device of claim 4 wherein the laser device is characterized by an output wavelength of about 505-550 nm or 425-475 nm.

11. The device of claim 4 further comprising a heat sink thermally coupled to the submount.

12. The device of claim 4 wherein the laser device is characterized by a peak wall plug efficiency of at least 25%; and further comprising one or more quantum wells positioned within the N number of active regions.

13. A laser device comprising:

a substrate, the substrate having a front edge and a back edge;

an active region positioned within the substrate;

an array of N laser emitters overlaying the active region, N being greater than 3, the array of N laser emitters extending substantially from the front edge of the substrate to the back edge of the substrate, each of the N laser emitters being configured to emit a blue or green laser at the front edge of the substrate, the array of N laser emitters being characterized by an average operating power, each of the N laser emitters being characterized by a length and a width, edges of each of the N laser emitters extending substantially parallel to one another along the entire length of the N laser emitters;

a common n-side electrode coupled to a back side of the substrate;

a common p-side electrode coupled to the array of N laser emitters, the common n-side electrode and the common p-side electrode electrically coupling the array of N laser emitters to one another in a parallel configuration; and

at least one optical member positioned at the front edge of the substrate for optically combining radiation from the array of N laser emitters to provide a laser output having a spectral width of at least 4 nm and a total operating power of at least 0.5 W.