Thin-film transistor, display apparatus and electronic apparatus

1. A thin-film transistor comprising:

a substrate;

a gate electrode;

a source electrode and a drain electrode which form a source/drain-electrode pair; and

a channel layer between said gate electrode and said source/drain-electrode pair,

wherein,

said channel layer includes a poly-crystal oxide semiconductor material and has a thickness in a range of 10 nm to 20 nm, inclusive, and

the poly-crystal oxide semiconductor material has a (222) face parallel to the substrate.

2. The thin-film transistor according to claim 1 wherein said poly-crystal oxide semiconductor material is an In 2 O 3 -group oxide semiconductor.

3. The thin-film transistor according to claim 2 wherein, in said channel layer including said In 2 O 3 -group oxide semiconductor, the (222) face or a (400) face of which matches a carrier propagation direction.

4. The thin-film transistor according to claim 1 wherein the crystal structure of said poly-crystal oxide semiconductor material is the Bixbyite structure.

5. The thin-film transistor according to claim 4 wherein, in said channel layer including said poly-crystal oxide semiconductor adopting said Bixbyite structure, the crystal axis of said crystal grains is oriented in the same direction as the (222) face or a (400) face.

6. The thin-film transistor according to claim 1 wherein said channel layer includes an impurity material.

7. The thin-film transistor according to claim 6 wherein said impurity material is selected from the group consisting of titanium (Ti), aluminum (Al), gallium (Ga), zinc (Zn), tin (Sn), molybdenum (Mo), and a lanthanoid element.

8. A display apparatus comprising:

a display device and

a thin-film transistor for driving said display device,

wherein, said thin-film transistor includes:

a substrate;

a gate electrode;

a source electrode and a drain electrode which form a source/drain-electrode pair;

a channel layer between said gate electrode and said source/drain-electrode pair, said channel layer includes a poly-crystal oxide semiconductor material and has a film thickness in a range of 10 nm to 20 nm, inclusive, and

the poly-crystal oxide semiconductor material has a (222) face parallel to the substrate.

9. An electronic apparatus including a display apparatus, said display apparatus comprising:

a display device and

a thin-film transistor configured to drive said display device,

wherein said thin-film transistor includes:

a substrate,

a gate electrode,

a source electrode and a drain electrode which form a source/drain-electrode pair,

a channel layer between said gate electrode and said source/drain-electrode pair, the channel layer including a poly-crystal oxide semiconductor material and having a thickness in a range of 10 nm to 20 nm, inclusive, and

the poly-crystal oxide semiconductor material has a (222) face parallel to the substrate.