CHEMICAL VAPOR DEPOSITION AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE USING CHEMICAL VAPOR DEPOSITION
A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.
1 . A chemical vapor deposition (CVD) method, the method comprising:
forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and
forming a second semiconductor layer on the first semiconductor layer at a second process temperature,
wherein the forming the first and second semiconductor layers is performed at least once.
2 . The CVD method of claim 1 , further comprising controlling the first and second process temperatures by first and second flowing gases flowing to a susceptor, respectively.
3 . The CVD method of claim 2 , wherein a thermal conductivity of the first flowing gas is different from a thermal conductivity of the second flowing gas.
4 . The CVD method of claim 2 , wherein each of the first and second flowing gases includes at least one selected from the group consisting of Ar, H 2 , N 2 , He, O 2 , CO 2 , and NH 3 .
5 . The CVD method of claim 1 , wherein a difference between the first and second process temperatures is from about 50° to about 150°.
6 . The CVD method of claim 1 , further comprising forming a third semiconductor layer on the second semiconductor layer at a third process temperature.
7 . The CVD method of claim 6 , further comprising controlling a third process temperature by a third flowing gas flowing to a susceptor.
8 . A method of manufacturing a light-emitting device (LED) by using a chemical vapor deposition (CVD) method, the method comprising:
forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and
forming a quantum barrier layer on the quantum well layer at a second process temperature,
wherein the forming the quantum well layer and the quantum barrier layer is performed at least once.
9 . The method of claim 8 , further comprising controlling the first and second process temperatures by using first and second flowing gases flowing to a susceptor, respectively.
10 . The method of claim 9 , wherein a thermal conductivity of the first flowing gas is different from a thermal conductivity of the second flowing gas.
11 . The method of claim 9 , wherein a thermal conductivity of the first flowing gas is less than a thermal conductivity of the second flowing gas.
12 . The method of claim 9 , wherein each of the first and second flowing gases includes at least one selected from the group consisting of Ar, H 2 , N 2 , He, O 2 , CO 2 , and NH 3 .
13 . The method of claim 9 , wherein the first flowing gas is Ar, and the second flowing gas is H 2 .
14 . The method of claim 9 , wherein the first flowing gas is N 2 , and the second flowing gas is H 2 .
15 . The method of claim 8 , wherein the first process temperature is from about 900° to about 1200°.
16 . The method of claim 8 , wherein the second process temperature is from about 900° to about 1200°.
17 . The method of claim 7 , wherein a difference between the first and second process temperatures is from about 50° to about 150°.
18 . The method of claim 8 , wherein each of the quantum well layer and the quantum barrier layer comprises at least one selected from the group consisting of GaN, GaInN, AlGaN, and AlGaInN.
19 . The method of claim 8 , wherein the quantum well layer comprises In x Ga 1-x N (0≦x≦1).
20 . The method of claim 8 , wherein the quantum barrier layer comprises In x Ga 1-x N (0≦x≦0.4).