Light emitting device
Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity.
1. A light emitting device comprising:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer provided at an upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch, wherein a center of the notch overlaps at least a portion of a flat top surface of the third layer,
wherein a first electrode is disposed on the first layer and the first electrode electrically connected to the first layer, and wherein an opening of the notch is disposed above a contact surface of the first electrode and the first layer, and
wherein the second layer of the first conductive semiconductor layer has a flat upper surface and a bottom surface that has a prescribed shape to correspond to the notch on the upper surface of the first layer.
2. The light emitting device according to claim 1 , wherein the blocking layer is an AlGaN/GaN superlattice layer.
3. The light emitting device according to claim 1 , wherein the first layer and the third layer are doped with impurities.
4. The light emitting device according to claim 1 , wherein the second layer comprises a silicon(Si).
5. The light emitting device according to claim 1 , wherein the second layer is an un-doped.
6. The light emitting device according to claim 1 , wherein the notch has a hexagonal pyramid or wedge shape.
7. The light emitting device according to claim 1 , further comprising a light-transmitting electrode layer disposed on the second conductive semiconductor layer.
8. The light emitting device according to claim 1 , further comprising:
a second electrode disposed on the second conductive semiconductor layer.
9. The light emitting device according to claim 1 , further comprising a buffer layer disposed on the substrate.
10. The light emitting device according to claim 1 , wherein a total thickness of the second layer and the third layer is 0.5-1 μm.
11. The light emitting device according to claim 1 , wherein the notch is one of a plurality of notches provided on the upper surface of the first layer of the first conductive semiconductor layer, and a center of each of the plurality of notches overlaps at least a portion of a flat top surface of the third layer.
12. A light emitting device package comprising a body forming a cavity, a first electrode layer mounted on the body, a second electrode layer mounted on the body, and a light emitting device electrically connected to the first electrode layer and the second electrode layer, wherein the light emitting device comprises:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer provided at an upper surface thereof with a plurality of notches, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the plurality of notches, wherein a center of each of the plurality of notches overlaps at least a portion of a flat top surface of the third layer,
wherein a first electrode is disposed on the first layer and the first electrode is electrically connected to the first layer, and wherein an opening of the plurality of notches is disposed above a contact surface of the first electrode and the first layer,
wherein the second layer of the first conductive semiconductor layer has a flat upper surface and a bottom surface that has a prescribed shape to correspond to the plurality of notches provided on the upper surface of the first layer.
13. The light emitting device package according to claim 12 , further comprising a buffer layer disposed on the substrate.
14. The light emitting device package according to claim 12 , wherein a total thickness of the second layer and the third layer is 0.5-1 μm.
15. The light emitting device package according to claim 12 , wherein an intermediate layer is disposed between the active layer and the second conductive layer, and wherein the intermediate layer has a larger band gap than the active layer.
16. A lighting device comprising a body, a cover connected to the body and a light emitting device module comprising a light emitting device,
wherein the light emitting device module is connected to the upper surface of the body,
wherein the light emitting device comprises:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer provided at an upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch, wherein a center of the notch overlaps at least a portion of a flat top surface of the third layer,
wherein a first electrode is disposed on the first layer and the first electrode electrically connected to the first layer, and wherein an opening of the notch is disposed above a contact surface of the first electrode and the first layer, and
wherein the second layer of the first conductive semiconductor layer has a flat upper surface and a bottom surface that has a prescribed shape to correspond to the notch on the upper surface of the first layer.
17. The lighting device according to claim 16 , wherein the notch is one of a plurality of notches provided on the upper surface of the first layer of the first conductive semiconductor layer, and a center of each of the plurality of notches overlaps at least a portion of a flat top surface of the third layer.