Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation
View Patent ↗An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.
1. A process of increasing a resolution of a solid state crystalline CZT detector comprising the step of first operating the solid state crystalline CZT detector at a first resolution mode without exposure to infrared light and thereafter exposing the crystalline CZT material to a wavelength of 1000 nm, wherein the detector achieves higher sensitivity.
2. The process according to claim 1 wherein said step of exposing crystalline CZT material to infrared light further defines exposing the material to infrared light having a wavelength of 950-1000 nm.
3. The process of operating a solid state crystalline CZT detector comprising a first step of operating detector in the absence of an infrared light source by having a detector with a first resolution value;
illuminating said crystalline CZT material in the detector to an infrared light source wherein the CZT detector can operate at a second resolution mode, the second resolution mode having greater resolution value than the first resolution value.
4. A device for detecting and identifying radioisotopes comprising;
a cadmium zinc telluride (CZT) camera-ray sensor configured to produce gamma-ray data;
a processor;
an analyzer coupled to the gamma-ray sensor and processor, the analyzer configured to produce pulse height data corresponding to the gamma-ray data;
a display component configured to display data on the analyzer so as to provide a visible indication of gamma-ray data;
an infrared light source operatively engaging the CZT sensor so as to selectively illuminate the sensor with infrared light having a wavelength of about 1000 nm wherein, upon exposure of the CZT sensor to the infrared light, the sensor operates at a higher resolution mode for an identification of the gamma-ray source.
5. The apparatus according to claim 4 wherein the infrared light source is disengaged, the CZT detector operates at a higher sensitivity mode than when the infrared light source is on.
6. The apparatus according to claim 4 wherein the infrared illumination source is in line with an electrical field of the CZT detector.