Thin film transistor array panel and manufacturing method thereof
A thin film transistor array panel includes: an substrate; a gate line and a gate pad portion disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad portion; a data line and a data pad portion disposed on the gate insulating layer; a gate assistance pad portion disposed at a position corresponding to the gate pad portion; a first insulating layer disposed on the data line and removed at the gate pad portion and the data pad portion; a first field generating electrode disposed on the first insulating layer; a second insulating layer disposed on the first field generating electrode and removed at the gate pad portion and the data pad portion; and a second field generating electrode disposed on the second insulating layer. The assistance gate pad portion and the gate insulating layer include a contact hole exposing the gate pad portion.
1. A thin film transistor array panel comprising:
an insulation substrate;
a gate line and a gate pad portion disposed on the insulation substrate;
a gate insulating layer disposed on and in contact with the gate line and the gate pad portion;
a semiconductor layer disposed on and in contact with the gate insulting layer over the gate pad portion;
a data line and a data pad portion disposed on the gate insulating layer;
a gate assistance pad portion disposed on the semiconductor layer opposite the gate insulting layer at a position corresponding to the gate pad portion;
a first insulating layer disposed on the data line;
a first field generating electrode disposed on the first insulating layer;
a second insulating layer disposed on the first field generating electrode; and
a second field generating electrode disposed on the second insulating layer,
wherein the assistance gate pad portion includes a hole and the semiconductor layer and gate insulating layer include a contact hole exposing an upper surface of the gate pad portion, an edge surface of the gate insulating layer, an edge surface of the semiconductor layer and an edge surface of the gate assistance pad portion, wherein the edge surface of the gate insulating layer is aligned with the edge surface of the semiconductor layer and together form a first taper angle with the insulting substrate, and the edge surface of the gate assistance pad portion forms a second taper angle with the insulating substrate that is smaller than the first taper angle,
wherein a connecting member is made with a first layer that is the same layer as the first field generating electrode, and a second layer contacting the first layer, the second layer is the same layer as the second field generating electrode, and the first layer is in contact with the upper surface of the gate pad portion, the edge surface of the gate insulating layer, the edge surface of the semiconductor layer and the edge surface of the gate assistance pad portion,
wherein the first insulating layer and the second insulating layer do not overlap the gate pad portion and the data pad portion,
wherein the gate insulating layer is the only insulating layer disposed between the gate pad portion and the gate assistance pad portion and the first insulating layer and the second insulating layer are not disposed between the gate pad portion and the gate assistance pad portion.
2. The thin film transistor array panel of claim 1 , wherein
the assistance gate pad portion is made of the same layer as the data line.
3. The thin film transistor array panel of claim 1 , wherein
the assistance gate pad portion includes at least one additional hole and the gate insulating layer includes at least one additional contact hole.
4. The thin film transistor array panel of claim 3 , wherein
a shape of the contact hole in a plan view is polygonal, circular, or oval.
5. The thin film transistor array panel of claim 4 , further comprising
an assistance data pad portion disposed at a position corresponding to the data pad portion.
6. The thin film transistor array panel of claim 5 , wherein
the gate insulating layer is disposed between the data pad portion and the assistance data pad portion.
7. The thin film transistor array panel of claim 6 , wherein
the assistance data pad portion and the gate line are made with a same material.
8. The thin film transistor array panel of claim 5 , wherein
one of the first field generating electrode and the second field generating electrode has a planar shape, and the other includes a branch electrode.
9. The thin film transistor array panel of claim 8 , wherein
the first insulating layer includes an organic insulator, and a surface thereof is flat.
10. The thin film transistor array panel of claim 1 , wherein
the assistance gate pad portion is made with the same layer as the data line.
11. The thin film transistor array panel of claim 10 , wherein
the assistance gate pad portion includes at least one additional hole and the gate insulating layer includes at least one additional contact hole.
12. The thin film transistor array panel of claim 11 , wherein
the shape of the contact hole in a plan view is polygonal, circular, or oval.
13. The thin film transistor array panel of claim 1 , further comprising
an assistance data pad portion disposed at a position corresponding to the data pad portion.
14. The thin film transistor array panel of claim 13 , wherein
the gate insulating layer is disposed between the data pad portion and the assistance data pad portion.
15. The thin film transistor array panel of claim 14 , wherein
the assistance data pad portion is made with the same layer as the gate line.
16. The thin film transistor array panel of claim 1 , wherein
one of the first field generating electrode and the second field generating electrode has a planar shape, and the other includes a branch electrode.
17. The thin film transistor array panel of claim 1 , wherein
the first insulating layer includes an organic insulator, and a surface thereof is flat.
18. The thin film transistor array panel of claim 1 , wherein
the shape of the contact hole in a plan view is polygonal, circular, or oval.