Semiconductor sensing device to minimize thermal noise
View Patent ↗An MEMS pressure sensor is designed to reduce or eliminate thermal noise, such as temperature offset voltage output. The pressure sensor includes a pressure sensing element having a diaphragm, and a cavity formed as part of the pressure sensing element, where the cavity receives a fluid such that the diaphragm at least partially deflects. The pressure sensing element also includes a plurality of piezoresistors, which are operable to generate a signal based on the amount of deflection in the diaphragm. At least one trench is integrally formed as part of the pressure sensing element, and an adhesive connects the pressure sensing element to the at least one substrate such that at least a portion of the adhesive is attached to the trench and redistributes thermally induced stresses on the pressure sensing element such that the thermally induced noise is substantially eliminated.
1. An apparatus, comprising:
a pressure sensing element, including:
a cavity formed into a base surface of the pressure sensing element;
a diaphragm defined at least in part by the cavity;
a plurality of piezoresistors on the diaphragm;
at least one trench surrounding the cavity and formed in the base surface;
a top surface; and
at least one outer surface terminating into the top surface and the base surface.
2. The apparatus of claim 1 , further comprising:
at least one substrate; and
an adhesive which connects the substrate to the base surface such that the at least one trench receives at least a portion of the adhesive.
3. The apparatus of claim 2 , the adhesive further comprising:
a base portion;
an outer fillet portion integrally formed with the base portion, the outer fillet portion adjacent the at least one outer surface when the pressure sensing element is connected to the at least one substrate; and
an inner fillet portion integrally formed with the base portion, the inner fillet portion substantially disposed in the trench when the pressure sensing element is connected to the at least one substrate.
4. The apparatus of claim 2 , wherein the portion of the adhesive disposed in the at least one trench redistributes the thermally induced stresses on the pressure sensing element such that the effect of the thermally induced stresses or thermal noise is substantially eliminated.
5. The apparatus of claim 1 , wherein the at least one trench is of a depth that is generally about one-tenth to one-half of the overall height of the at least one substrate.
6. The apparatus of claim 5 , wherein the at least one trench is of a depth that is about one-third to one-half of the overall height of the at least one substrate.
7. The apparatus of claim 1 , further comprising:
a cap connected to the top surface; and
a chamber integrally formed as part of the cap such that the chamber is at least partially evacuated.
8. The apparatus of claim 7 , wherein the cap is made of a borosilicate glass.
9. The apparatus of claim 7 , wherein the cap is made of silicon.
10. The apparatus of claim 1 , wherein the plurality of piezoresistors are configured to be a picture frame Wheatstone bridge.
11. The apparatus of claim 1 , wherein the plurality of piezoresistors are configured to be a distributed Wheatstone bridge.
12. The apparatus of claim 1 , further comprising:
at least one inner surface formed as part of the pressure sensing element such that the at least one inner surface is substantially perpendicular to the diaphragm; and
at least one base surface formed as part of the pressure sensing element such that the base surface terminates into the at least one inner surface, the at least one trench formed as part of the base surface.
13. The apparatus of claim 12 , further comprising:
a cavity formed as part of the pressure sensing element; and
a bottom surface formed as part of the pressure sensing element, the at least one inner surface terminating into the bottom surface such that the at least one inner surface and the bottom surface form at least a portion of the cavity, the bottom surface forming at least a portion of the diaphragm;
wherein a fluid in the cavity applies pressure to the bottom surface to deflect the bottom surface.
14. The apparatus of claim 1 , further comprising:
a cap connected to the pressure sensing element; and
a chamber integrally formed as part of the cap such that the chamber is partially evacuated.
15. The apparatus of claim 14 , wherein the cap is made of a borosilicate glass.
16. The apparatus of claim 14 , wherein the cap is made of silicon.
17. A pressure sensor, comprising:
a pressure sensing element having a diaphragm;
a cavity formed as part of the pressure sensing element;
a plurality of piezoresistors connected to the pressure sensing element;
a top surface formed as part of the pressure sensing element such that at least a portion of the top surface is part of the diaphragm, the plurality of piezoresistors being on the top surface;
a plurality of outer surfaces formed as part of the pressure sensing element, each of the plurality of outer surfaces terminating into the top surface;
a bottom surface formed as part of the pressure sensing element, each of the plurality of outer surfaces terminating into the bottom surface;
a plurality of inner surfaces formed as part of the pressure sensing element, the plurality of inner surfaces terminating into the bottom surface such that the plurality of inner surfaces and the bottom surface form at least a portion of the cavity;
a base surface formed as part of the pressure sensing element, the base surface terminating into the plurality of inner surfaces, and the plurality of outer surfaces;
at least one trench integrally formed as part of the base surface;
at least one substrate configured to support the pressure sensing element; and
an adhesive connecting the pressure sensing element to the at least one substrate;
wherein at least a portion of the adhesive is disposed in the at least one trench.
18. The pressure sensor of claim 17 , the adhesive further comprising:
a base portion;
an outer fillet portion integrally formed with the base portion, the outer fillet portion adjacent the at least one outer surface when the pressure sensing element is connected to the at least one substrate; and
an inner fillet portion integrally formed with the base portion, the inner fillet portion substantially disposed in the trench when the pressure sensing element is connected to the at least one substrate.
19. The pressure sensor of claim 17 , wherein the at least one trench is of a depth that is generally about one-tenth to one-half of the overall height of the at least one substrate.
20. The pressure sensor of claim 19 , wherein the at least one trench is of a depth that is about one-third to one-half of the overall height of the at least one substrate.
21. The pressure sensor of claim 17 , further comprising:
a cap connected to the top surface; and
a chamber integrally formed as part of the cap such that the chamber is partially evacuated.
22. The apparatus of claim 21 , wherein the cap is made of a borosilicate glass.
23. The apparatus of claim 21 , wherein the cap is made of silicon.
24. The pressure sensor of claim 17 , wherein the plurality of piezoresistors are configured to be a picture frame Wheatstone bridge.
25. The pressure sensor of claim 17 , wherein the plurality of piezoresistors are configured to be a distributed Wheatstone bridge.