Method of surface tension control to reduce trapped gas bubbles
The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
1. A method, comprising:
forming a surface of a patterned imprint template having a first resist flow rate;
forming a surface of a substrate having a second resist flow rate, wherein the first and second resist flow rates are differential flow rates selected to avoid trapping gas in a resist by pushing gas toward the imprint template for venting through the patterned recesses of imprint template;
dispensing a resist onto the surface of the substrate;
imprinting the resist with the imprint template while venting gas through the patterned recesses of the imprint template; and
curing the resist to transfer a pattern from the imprint template to the resist, and
wherein the patterned recesses of the imprint template form a pattern in the resist.
2. The method of claim 1 , wherein the differential flow rates are selected such that the surface of the imprint template is more hydrophobic than the surface of the substrate.
3. The method of claim 2 , wherein the resist forms a first contact angle with the surface of the imprint template and a second contact angle with the surface of the substrate while imprinting the resist, and wherein the first contact angle is greater than the second contact angle.
4. The method of claim 1 , wherein the differential flow rates are selected such that the second resist flow rate is slower than the first resist flow rate.
5. The method of claim 4 , wherein forming the surface of the imprint template comprises depositing a fluoroalkylsilane layer over the imprint template to form the surface of the imprint template.
6. The method of claim 5 , wherein the fluoroalkylsilane is selected from a group consisting of 1H,1H,2H,2H-perfluorodecyltrichlorosilane; 1H,1H,2H,2H-perfluorooctyltrichlorosilane; and 1H,1H,2H,2H-perfluorooctyltriethoxysilane.
7. The method of claim 5 , wherein forming the surface of the substrate comprises depositing an adhesion promoter layer over the substrate to form the surface of the substrate, and wherein the adhesion promoter layer facilitates adherence of the resist.
8. The method of claim 1 , wherein the imprint template is a nanoimprint template for bit-patterned media.
9. The method of claim 1 , wherein the imprint template is quartz and the gas is helium.
10. A method, comprising:
depositing a first layer over an imprint template to form a surface of the imprint template having a first resist flow rate;
depositing a second layer over a substrate to form a surface of the substrate having a second resist flow rate, wherein the first and second resist flow rates are differential flow rates selected to avoid trapping gas in a resist by pushing gas toward the imprint template for venting through patterned recesses of the imprint template; and
imprinting a resist on the surface of the substrate with the imprint template while venting gas through the patterned recesses of the imprint template, and
wherein the patterned recesses of the imprint template form a pattern in the resist.
11. The method of claim 10 , wherein the differential flow rates are selected to facilitate filling the patterned recesses of the imprint template with the resist by capillary action.
12. The method of claim 10 ,
wherein the differential flow rates are selected such that the surface of the imprint template is more hydrophobic than the surface of the substrate.
13. The method of claim 12 , wherein the second layer comprises an adhesion promoter layer to facilitate adherence of the resist.
14. The method of claim 13 , wherein the first layer comprises a fluoroalkylsilane, wherein the resist forms a first contact angle with the surface of the imprint template and a second contact angle with the surface of the substrate while imprinting the resist, and wherein the first contact angle is greater than the second contact angle.
15. The method of claim 14 , wherein the fluoroalkylsilane selected from a group consisting of 1H,1H,2H,2H-perfluorodecyltrichlorosilane; 1H,1H,2H,2H-perfluorooctyltrichlorosilane; and 1H,1H,2H,2H-perfluorooctyltriethoxysilane.
16. A method, comprising:
imprinting a resist on a surface of a substrate with an imprint template while venting gas through patterned recesses of the imprint template,
wherein a surface of the imprint template has a first resist flow rate,
wherein the surface of the substrate has a second resist flow rate,
wherein the first and second resist flow rates are differential flow rates selected to avoid trapping the gas in the resist by pushing the gas toward the imprint template for venting through the patterned recesses of the imprint template, and
wherein the patterned recesses of the imprint template form a pattern in the resist.
17. The method of claim 16 , wherein the differential flow rates are selected to facilitate filling the patterned recesses of the imprint template with the resist by capillary action.
18. The method of claim 17 , wherein the imprint template is a quartz nanoimprint template for bit-patterned media, and wherein the gas is helium.
19. The method of claim 18 , wherein the imprint template has pores about 0.3 nm in diameter for venting the gas through the imprint template.
20. The method of claim 16 , further comprising:
depositing a fluoroalkylsilane layer over the imprint template to form the surface of the imprint template, and
depositing an adhesion promoter layer over the substrate to form the surface of the substrate, wherein the differential flow rates are selected such that the fluoroalkylsilane layer is less wettable than the adhesion promoter layer.