Light emitting device having a well structure different of a multi-quantum well structures
A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first barrier layer having a first band gap which is the nearest to the second conductive type semiconductor layer, a second barrier layer adjacent to the first barrier, and a third barrier layer between the second bather layer and the first conductive type semiconductor layer. The well layers comprise a first well layer having a third band gap different from the first band gap between the first and second bather layers, and a second well layer between the second barrier layer and the third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer.
1. A light emitting device comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer on the first conductive type semiconductor layer; and
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising a plurality of well layers and a plurality of barrier layers,
wherein the plurality of barrier layers comprise:
a first barrier layer that is the nearest to the second conductive type semiconductor layer, the first barrier layer having a first band gap;
a second barrier layer adjacent to the first barrier layer; and
at least one third barrier layer between the second barrier layer and the first conductive type semiconductor layer,
wherein the plurality of well layers comprise:
a first well layer between the first barrier layer and the second barrier layer, the first well layer having a third band gap; and
a second well layer between the second barrier layer and the at least one third barrier layer, the second well layer having a second band gap,
the first well layer has a thickness thinner than that of the second well layer; and
the third band gap is different from the first band gap,
wherein the second conductive type semiconductor layer includes a different conductive type dopant from the first conductive type semiconductor layer.
2. The light emitting device according to claim 1 , wherein the third band gap is wider than the second band gap.
3. The light emitting device according to claim 1 , wherein the first well layer has a depth lower than that of the second well layer.
4. The light emitting device according to claim 1 , wherein the plurality of barrier layers have a same thickness as each other.
5. The light emitting device according to claim 1 , wherein the second barrier layer has a thickness thinner than that of each of the first barrier layer and the at least one third barrier layer.
6. The light emitting device according to claim 1 , comprising a second clad layer between the first barrier layer and the second conductive type semiconductor layer, the second clad layer having a band gap wider than the first band gap.
7. The light emitting device according to claim 4 , wherein the first well layer has a thickness corresponding to a range from about 30% to about 60% of a thickness of the second well layer.
8. The light emitting device according to claim 7 , wherein a thickness difference between the second well layer and the second barrier layer ranges from about 2 nm to about 3 nm, and the first well layer has a thickness of about 1 nm to about 2 nm.
9. The light emitting device according to claim 1 , wherein the first well layer has an indium content less than that of the second well layer and a compositional formula of In x Ga 1-x N (0.07<x<0.08).
10. The light emitting device according to claim 5 , wherein the second barrier layer has a thickness ranging from about 3 nm to about 4 nm.
11. A light emitting device comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer; and
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising a plurality of well layers and a plurality of barrier layers,
wherein each of the plurality of barrier layers has a first band gap,
the plurality of well layers comprises:
a first well layer that is the nearest to the second conductive type semiconductor layer, the first well layer having a third band gap; and
a plurality of second well layers adjacent to the first conductive type semiconductor layer and nearer to the first conductive type semiconductor layer than the first well layer, the plurality of second well layers each having a second band gap,
the first well layer has a thickness thinner than that of each of the plurality of second well layers, and
the third band gap is disposed between the first band gap and the second band gap,
wherein the second conductive type semiconductor layer includes a different conductive type dopant from the first conductive type semiconductor layer.
12. The light emitting device according to claim 11 , wherein each of the plurality of well layers comprise an InGaN-based semiconductor, and
wherein each of the plurality of barrier layers comprises a semiconductor having a compositional formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1), and each of the barrier layers is an InGaN-based semiconductor.
13. The light emitting device according to claim 12 , wherein the first conductive type semiconductor layer comprises an n-type dopant, and the second conductive type semiconductor layer comprises a p-type dopant.
14. The light emitting device according to claim 11 , wherein the first well layer has a depth lower than that of the second well layer.
15. The light emitting device according to claim 11 , wherein the plurality of barrier layers have a same thickness as each other.
16. The light emitting device according to claim 11 , wherein the plurality of barrier layers comprise:
a first barrier layer that is the nearest to the second conductive type semiconductor layer, the first barrier layer having the first band gap;
a second barrier layer adjacent to the first barrier layer; and
at least one third barrier layer between the second barrier layer and the first conductive type semiconductor layer, wherein the second barrier layer has a thickness thinner than that of each of the first barrier layer and the at least one third barrier layer.
17. The light emitting device according to claim 16 , comprising a second clad layer between the first barrier layer and the second conductive type semiconductor layer, the second clad layer having a band gap wider than the first band gap.
18. The light emitting device according to claim 11 , wherein the first well layer has a thickness corresponding to a range from about 30% to about 60% of a thickness of the second well layer.
19. The light emitting device according to claim 1 , wherein the active layer has a peak wavelength of about 420 nm to about 450 nm.
20. A light emitting device comprising:
a first conductive type semiconductor layer including a first conductive type dopant;
a second conductive type semiconductor layer including a second conductive type dopant different from the first conductive type dopant; and
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising a plurality of well layers and a plurality of barrier layers,
wherein each of the plurality of barrier layers has a first band gap,
the plurality of well layers comprises:
a plurality of first well layers having a second band gap; and
a second well layer having a third band gap narrower than the first band gap and wider than the second band gap, and
the second well layer is disposed more close to the second conductive type semiconductor layer than the first well layer.