Avalanche photodiode having controlled breakdown voltage
View Patent ↗Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.
1. An apparatus comprising a first APD, wherein the first APD comprises:
a first diffusion region that is doped with a first dopant, wherein the first diffusion region comprises a first device region and a first diffusion sink, and wherein the first device region and the first diffusion sink are non-contiguous, and further wherein the first diffusion sink is dimensioned and arranged to control the diffusion depth in the first device region, the diffusion depth in the first device region being based on a first attribute of the first diffusion sink.
2. The apparatus of claim 1 , wherein the first attribute is a first separation distance between the first diffusion sink and the first device region.
3. The apparatus of claim 1 , wherein the first attribute is a first width.
4. The apparatus of claim 1 further comprising a second APD, wherein the second APD comprises:
a second diffusion region, wherein the second diffusion region comprises a second device region and a second diffusion sink, and wherein the second device region and the second diffusion sink are non-contiguous, and further wherein the diffusion depth in the second device region is based on a second attribute of the second diffusion sink.
5. The apparatus of claim 4 , wherein the first attribute is a first separation distance between the first diffusion sink and the first device region, and wherein the second attribute is a second separation distance between the second diffusion sink and the second device region, and further wherein the first separation distance and the second separation distance are substantially equal.
6. The apparatus of claim 4 , wherein the first attribute is a first width, and wherein the second attribute is a second width, and further wherein the first width and the second width are substantially equal.
7. The apparatus of claim 1 further comprising:
a second APD comprising a second diffusion region, wherein the second diffusion region comprises a second device region and a second diffusion sink, and wherein the second device region and the second diffusion sink are non-contiguous, and further wherein the diffusion depth in the second device region is based on a second attribute of the second diffusion sink; and
a third APD comprising a third diffusion region that is doped with a third dopant, wherein the third diffusion region comprises a third device region and a third diffusion sink, and wherein the third device region and the third diffusion sink are non-contiguous, and further wherein the diffusion depth in the third device region is based on a third attribute of the third diffusion sink.
8. The apparatus of claim 7 , wherein the first APD, second APD, and third APD are arranged along a first axis, and wherein at least one of the first diffusion sink and the second diffusion sink interposes the first device region and the second device region, and further wherein at least one of the second diffusion sink and the third diffusion sink interposes the second device region and the third device region.
9. The apparatus of claim 7 further comprising a fourth APD comprising a fourth diffusion region that is doped with a fourth dopant, wherein the fourth diffusion region comprises a fourth device region and a fourth diffusion sink, and wherein the fourth device region and the fourth diffusion sink are non-contiguous, and further wherein the diffusion depth in the fourth device region is based on a fourth attribute of the fourth diffusion sink.
10. The apparatus of claim 9 , wherein the first APD, second APD, third APD, and fourth APD are arranged in a two-dimensional array having a first row and a second row, and wherein the first row comprises the first APD and the second APD, and further wherein the second row comprises the third APD and the fourth APD;
wherein at least one of the first diffusion sink and the second diffusion sink interposes the first device region and the second device region;
wherein at least one of the first diffusion sink and the third diffusion sink interposes the first device region and the third device region;
wherein at least one of the third diffusion sink and the fourth diffusion sink interposes the third device region and the fourth device region; and
wherein at least one of the second diffusion sink and the fourth diffusion sink interposes the second device region and the fourth device region.
11. An apparatus comprising a first APD, wherein the first APD comprises:
a first diffusion region that is doped with a first dopant, wherein the first diffusion region comprises a first device region and a first diffusion sink, and wherein the first device region and the first diffusion sink are non-contiguous, and further wherein the first diffusion sink is characterized by a first attribute that is based on a first pre-determined relationship between diffusion depth in a first portion of a second diffusion region and the first attribute of a second portion of the second diffusion region.
12. The apparatus of claim 11 , wherein the first attribute is a first separation distance between the first diffusion sink and the first device region.
13. The apparatus of claim 11 , wherein the first attribute is a first width.
14. The apparatus of claim 11 further comprising a second APD, wherein the second APD comprises:
a third diffusion region, wherein the second diffusion region comprises a second device region and a second diffusion sink, and wherein the second device region and the second diffusion sink are non-contiguous, and further wherein the second diffusion sink is characterized by a second attribute that is based on the first pre-determined relationship.
15. The apparatus of claim 14 , wherein the first attribute is a first separation distance between the first diffusion sink and the first device region, and wherein the second attribute is a second separation distance between the second diffusion sink and the second device region, and further wherein the first separation distance and the second separation distance are substantially equal.
16. The apparatus of claim 14 , wherein the first attribute is a first width, and wherein the second attribute is a second width, and further wherein the first width and the second width are substantially equal.
17. The apparatus of claim 11 further comprising:
a second APD comprising a third diffusion region, wherein the third diffusion region comprises a second device region and a second diffusion sink, and wherein the second device region and the second diffusion sink are non-contiguous, and further wherein the second diffusion sink is characterized by a second attribute that is based on the first pre-determined relationship; and
a third APD comprising a fourth diffusion region that is doped with a third dopant, wherein the fourth diffusion region comprises a third device region and a third diffusion sink, and wherein the third device region and the third diffusion sink are non-contiguous, and further wherein the third diffusion sink is characterized by a third attribute that is based on the first pre-determined relationship.
18. The apparatus of claim 17 , wherein the first APD, second APD, and third APD are arranged along a first axis, and wherein at least one of the first diffusion sink and the second diffusion sink interposes the first device region and the second device region, and further wherein at least one of the second diffusion sink and the third diffusion sink interposes the second device region and the third device region.
19. The apparatus of claim 17 further comprising a fourth APD comprising a fifth diffusion region that is doped with a fourth dopant, wherein the fifth diffusion region comprises a fourth device region and a fourth diffusion sink, and wherein the fourth device region and the fourth diffusion sink are non-contiguous, and further wherein the fourth diffusion sink is characterized by a fourth attribute that is based on the first pre-determined relationship.
20. The apparatus of claim 19 , wherein the first APD, second APD, third APD, and fourth APD are arranged in a two-dimensional array having a first row and a second row, and wherein the first row comprises the first APD and the second APD, and further wherein the second row comprises the third APD and the fourth APD;
wherein at least one of the first diffusion sink and the second diffusion sink interposes the first device region and the second device region;
wherein at least one of the first diffusion sink and the third diffusion sink interposes the first device region and the third device region;
wherein at least one of the third diffusion sink and the fourth diffusion sink interposes the third device region and the fourth device region; and
wherein at least one of the second diffusion sink and the fourth diffusion sink interposes the second device region and the fourth device region.