Plasmon absorption modulator systems and methods
View Patent ↗Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.
1. A plasmon absorption modulator system comprising:
a semiconductor substrate having a top surface;
a variable absorption layer;
a metal layer having a length parallel to the top surface of the semiconductor substrate and configured to enable propagation of plasmons along its length; and
a coupling structure configured to receive electromagnetic radiation and in response to such received radiation to generate a plasmonic current in the metal layer, and/or to receive plasmonic current from the metal layer and in response to such received current to generate and transmit electromagnetic radiation;
wherein the variable absorption layer comprises a plurality of quantum well layers stacked on a top surface of the semiconductor substrate;
wherein the metal layer is formed on a top surface of the stack of quantum well layers; and
wherein the variable absorption layer is configured to attenuate plasmons of at least some frequencies propagating along the metal layer by an amount that depends on a voltage applied across the stack of quantum well layers.
2. The system of claim 1 , wherein the metal layer comprises an elongated metal strip extending in a first direction along the top surface of the stack of quantum well layers.
3. The system of claim 1 , wherein at least one said coupling structure is formed on at least one end of the metal layer.
4. The system of claim 3 , wherein the coupling structure comprises a diffraction grating.
5. The system of claim 1 , further comprising:
a cladding layer formed at least partially surrounding the metal layer.
6. The system of claim 1 , further comprising:
an electrode directly coupled to the stack of quantum well layers; and
a voltage source electrically coupled to the electrode, the voltage source configured to apply a voltage across the stack of quantum well layers to modulate a plasmonic current propagating in the metal layer.
7. The system of claim 6 , wherein the voltage source is configured to apply a voltage across the stack of quantum well layers in order to modulate a signal onto the plasmonic current propagating in the metal layer.
8. A method for modulating plasmonic current comprising:
enabling propagation of the plasmonic current along a metal layer, the metal layer positioned on a stack of quantum well layers formed on a semiconductor substrate; and
applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers.
9. The method of claim 8 , further comprising:
generating the plasmonic current at one end of the metal layer with a coupling structure formed on the metal layer.
10. The method of claim 8 , wherein the applying step comprises:
applying a voltage across the stack of quantum well layers in order to modulate a signal onto the plasmonic current.
11. The method of claim 10 , further comprising:
emitting electromagnetic radiation including the signal from the metal layer with a coupling structure formed on the metal layer.
12. A metamaterial switching system comprising:
a semiconductor substrate having a top surface;
a variable absorption layer; and
at least one metamaterial structure;
wherein the variable absorption layer comprises a plurality of quantum well layers stacked on a top surface of the semiconductor substrate;
wherein at least one said metamaterial structure is formed on a top surface of the stack of quantum well layers; and
wherein the variable absorption layer is configured to switch on or off an operation of at least one said metamaterial structure in response to a voltage applied across the stack of quantum well layers.
13. The system of claim 12 , wherein the at least one metamaterial structure comprises an array of metamaterial structures.
14. The system of claim 13 , wherein the array of metamaterial structures comprises an array of split ring resonators.
15. The system of claim 12 , further comprising:
an electrode directly coupled to the stack of quantum well layers; and
a voltage source electrically coupled to the electrode, the voltage source configured to apply a voltage across the stack of quantum well layers to switch on or off an operation of the at least one metamaterial structure.