THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY
Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.
1 . A manufacturing method of a thin film transistor comprising:
forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and
removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.
2 . The manufacturing method of a thin film transistor of claim 1 , wherein
the channel layer is formed by forming an amorphous oxide semiconductor film above the gate insulating film first and then transforming the amorphous oxide semiconductor into a crystalline oxide semiconductor prior to the formation of the source/drain electrodes.
3 . The manufacturing method of a thin film transistor of claim 2 , wherein
the source/drain electrodes are formed by forming a metal film in such a manner as to be in contact with the channel protection film first and then patterning the metal film, and
the amorphous oxide semiconductor is transformed into the crystalline oxide semiconductor prior to the formation of the metal film to form the channel layer.
4 . The manufacturing method of a thin film transistor of claim 1 , wherein
the channel layer is formed by forming a crystalline oxide semiconductor film above the gate insulating film.
5 . The manufacturing method of a thin film transistor of claim 1 , wherein
the source/drain electrodes are formed simultaneously with etching of the channel protection film.
6 . The manufacturing method of a thin film transistor of claim 5 , wherein
the source/drain electrodes each have a multilayer structure, and
the channel protection film serves also as one of the layers of the multilayer structure.
7 . The manufacturing method of a thin film transistor of claim 1 , wherein
the channel protection film is etched using the source/drain electrodes as an etching mask after the formation of the source/drain electrodes.
8 . A manufacturing method of a thin film transistor comprising:
forming a channel layer made of an oxide semiconductor and a channel protection film made of a conductive material adapted to cover the channel layer;
removing the channel protection film by etching relying on selectivity between the conductive material and crystalline oxide semiconductor; and
forming a pair of source and drain electrodes above the channel layer in such a manner as to be in contact with the gate electrode and the channel layer with a gate insulating film provided therebetween.
9 . A thin film transistor comprising:
a gate electrode;
a channel layer made of a crystalline oxide semiconductor and provided above the gate electrode with a gate insulating film provided therebetween;
a pair of channel protection films made of a conductive film, in contact with the channel layer and electrically disconnected from each other; and
a pair of source and drain electrodes each of which is electrically connected to the channel layer via one of the channel protection films.
10 . The thin film transistor of claim 9 , wherein
each of the opposed surfaces of the pair of source/drain electrodes forms the same surface with one of the opposed surfaces of the pair of channel protection films.
11 . The thin film transistor of claim 9 , wherein
edge portions of the pair of channel protection films are formed at the same positions as those of the channel layer.
12 . The thin film transistor of claim 9 , wherein
the pair of channel protection films are made of molybdenum (Mo), titanium (Ti), manganese (Mn) or copper (Cu), or an oxide, nitride or oxynitride thereof.
13 . A display comprising:
a plurality of pixels; and
thin film transistors adapted to drive the plurality of pixels, wherein
each of the thin film transistors includes
a gate electrode,
a channel layer made of a crystalline oxide semiconductor and provided above the gate electrode with a gate insulating film provided therebetween,
a pair of channel protection films made of a conductive film, in contact with the channel layer and electrically disconnected from each other, and
a pair of source and drain electrodes each of which is electrically connected to the channel layer via one of the channel protection films.