Light-emitting device package and method of manufacturing the same

1. A light-emitting device package comprising:

a wiring substrate;

a Zener diode mounted on a first region of the wiring substrate;

a light-emitting device chip mounted on a second region of the wiring substrate, the second region being different from the first region; and

a molding member for fixing at least a portion of the wiring substrate,

wherein the Zener diode is embedded in the molding member.

2. The light-emitting device package of claim 1 , wherein the first region of the wiring substrate is formed to be concave with a step difference.

3. The light-emitting device package of claim 2 , wherein a depth of the first region of the wiring substrate is the same or greater than a height of the Zener diode.

4. The light-emitting device package of claim 1 , wherein the first region of the wiring substrate is concave and bent.

5. The light-emitting device package of claim 1 , wherein a connection member for electrically connecting the Zener diode and the wiring substrate to each other is embedded in the molding member.

6. The light-emitting device package of claim 5 , wherein the connection member is a bonding wire.

7. The light-emitting device package of claim 1 , wherein the molding member surrounds the wiring substrate, except for the second region.

8. The light-emitting device package of claim 7 , wherein the molding member is formed to directly contact a lateral surface of the light-emitting device chip.

9. The light-emitting device package of claim 7 , wherein an upper surface of the molding member is uniformly formed flat.

10. The light-emitting device package of claim 1 , wherein light-emitting device chip is connected to the wiring substrate through a bonding wire.

11. The light-emitting device package of claim 10 , wherein the bonding wire is attached to a surface of the wiring substrate, on which the light-emitting device chip is attached, and is embedded in the molding member.

12. The light-emitting device package of claim 10 , wherein the bonding wire is attached to an opposite surface to a surface of the wiring substrate, on which the light-emitting device chip is attached.

13. The light-emitting device package of claim 1 , wherein the light-emitting device chip is bonded to the wiring substrate by using a flip-chip bonding method.

14. The light-emitting device package of claim 1 , wherein at least one through-hole is formed in the first region, the second region, and a third region of the wiring substrate, and the modifying member is filled in the at least one through-hole.

15. The light-emitting device package of claim 14 , wherein the at least one through-hole is formed so that an upper portion of the at least one through-hole is wider than a lower portion of the at least one through-hole or the lower portion of the at least one through-hole is wider than the upper portion of the at least one through-hole.

16. The light-emitting device package of claim 1 , further comprising a phosphor layer formed on an emissive surface of the light-emitting device chip.

17. The light-emitting device package of claim 1 , further comprising a lens disposed on an emissive surface of the light-emitting device chip.

18. The light-emitting device package of claim 1 , wherein the wiring substrate comprises at least two leads that are electrically insulated from each other.

19. The light-emitting device package of claim 1 , further comprising a solder bump formed on the lower surface of the wiring substrate.

20. A method of manufacturing a light-emitting device package, the method comprising:

preparing a wiring substrate;

disposing a Zener diode on a first region of the wiring substrate;

disposing a light-emitting device chip on a second region of the wiring substrate, the second region being different from the first region; and

forming a molding member so as to fix the wiring substrate,

wherein the Zener diode is embedded in the molding member.

21. The method of claim 20 , wherein the preparing of the wiring substrate comprises performing half-etching on the first region of the wiring substrate so that the first region is concave.

22. The method of claim 21 , wherein a depth of the first region is the same or greater than a height of the mounted Zener diode or a height of the mounted Zener diode.

23. The method of claim 20 , wherein the preparing of the wiring substrate comprises bending the wiring substrate so that the first region is concave.

24. The method of claim 20 , wherein the forming of the molding member is performed prior to the disposing of the light-emitting device chip.

25. The method of claim 20 , wherein the forming of the molding member is performed after the light-emitting device chip is disposed.