Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.
1. A method of manufacturing an electronic apparatus, the method comprising:
depositing a first conductive medium on a base to form at least one first conductor;
depositing a plurality of semiconductor substrate particles suspended in a carrier medium;
forming an ohmic contact between the plurality of semiconductor substrate particles and the at least one first conductor;
forming a pn junction in each semiconductor substrate particle by depositing a dopant onto the plurality of semiconductor substrate particles and annealing the plurality of semiconductor substrate particles to form a plurality of semiconductor diodes;
depositing a second conductive medium to form at least one second conductor coupled to the plurality of semiconductor diodes; and
depositing a plurality of substantially spherical lenses suspended in a first polymer over the plurality of diodes, the plurality of substantially spherical lenses having at least a first index of refraction and the first polymer having at least a second, different index of refraction.
2. The method of claim 1 , wherein the plurality of semiconductor diodes are substantially spherical, substantially toroidal, substantially cylindrical, substantially faceted, substantially rectangular, substantially flat, or substantially elliptical.
3. The method of claim 1 , wherein the plurality of semiconductor diodes are substantially spherical, and wherein a ratio of a mean diameter of the plurality of substantially spherical lenses to a mean diameter of the plurality of semiconductor diodes is substantially about five to one (5:1).
4. The method of claim 1 , wherein the plurality of semiconductor diodes are substantially spherical, and wherein a ratio of a mean diameter of the plurality of substantially spherical lenses to a mean diameter of the plurality of semiconductor diodes is between about ten to one (10:1) and two to one (2:1).
5. The method of claim 1 , wherein the plurality of semiconductor diodes are substantially spherical, and wherein the comparative size or spacing of the plurality of substantially spherical lenses provide a mode coupling to the plurality of semiconductor diodes.
6. The method of claim 1 , wherein a mean diameter or length of the plurality of semiconductor diodes is greater than about twenty (20) microns and less than about forty (40) microns.
7. The method of claim 1 , wherein the step of depositing the plurality of substantially spherical lenses suspended in the first polymer further comprises attaching a prefabricated layer to the plurality of semiconductor diodes, the prefabricated layer comprising the plurality of substantially spherical lenses suspended in the first polymer.
8. The method of claim 1 , wherein the plurality of semiconductor substrate particles comprise gallium nitride, gallium arsenide, or silicon.
9. The method of claim 8 , wherein the first conductive medium comprises a conductive ink or a conductive polymer.
10. The method of claim 1 , further comprising:
partially curing the first conductive medium;
wherein the step of forming an ohmic contact further comprises fully curing the first conductive medium.
11. The method of claim 1 , wherein the step of depositing the first conductive medium comprises sputtering, coating, vapor depositing or electroplating a metal, a metal alloy, or a combination of metals.
12. The method of claim 1 , wherein the carrier medium is a reactive carrier medium and wherein the step of forming an ohmic contact further comprises:
removing the reactive carrier medium; and
curing or re-curing the first conductive medium.
13. The method of claim 1 , wherein the carrier medium is an anisotropic carrier medium and wherein the step of forming an ohmic contact further comprises:
compressing the plurality of semiconductor substrate particles suspended in the anisotropic conductive medium.
14. The method of claim 1 , wherein the step of forming an ohmic contact further comprises:
annealing or alloying the plurality of semiconductor substrate particles with the at least one first conductor.
15. The method of claim 1 , wherein the annealing or alloying is laser or thermal annealing or alloying.
16. The method of claim 1 , wherein the dopant material is a substrate liquid or film or a dopant element or compound suspended in a carrier.
17. The method of claim 1 , wherein the dopant is deposited on a first, upper portion of the plurality of semiconductor substrate particles and wherein about fifteen percent to fifty-five percent of a surface of each semiconductor diode of substantially all of the plurality of semiconductor diodes has a layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant.
18. The method of claim 1 , wherein the resulting plurality of semiconductor diodes are light emitting diodes or photovoltaic diodes.
19. The method of claim 1 , further comprising:
depositing a plurality of third conductors over or within the plurality of second conductors.
20. The method of claim 1 , wherein the base further comprises a Bragg reflector or a reflective plastic or polyester coating.
21. The method of claim 1 , wherein the base further comprises:
a plurality of conductive vias extending between a first side and a second side of the base and correspondingly coupled at the first side to the plurality of first conductors; and
a conductive backplane coupled to the plurality of conductive vias and coupled to or integrated with the second side of the base.
22. The method of claim 1 , further comprising:
depositing a plurality of inorganic dielectric particles suspended with a photoinitiator compound in a second polymer or resin to form a plurality of insulators correspondingly coupled to each of the plurality of diodes.
23. The method of claim 1 , wherein the base comprises at least one of the following: paper, coated paper, plastic coated paper, embossed paper, fiber paper, cardboard, poster paper, poster board, wood, plastic, rubber, fabric, glass, and/or ceramic.
24. The method of claim 1 , wherein the step of depositing a second conductive medium further comprises:
depositing an optically transmissive conductor or conductive compound suspended in a polymer, resin or other media.
25. The method of claim 24 , wherein the optically transmissive conductor or conductive compound suspended in a polymer, resin or other media further comprises at least one of the following: carbon nanotubes, antimony tin oxide, indium tin oxide, or polyethylene-dioxithiophene.
26. The method of claim 1 , wherein the plurality of substantially spherical lenses comprise borosilicate glass or polystyrene latex.
27. The method of claim 1 , further comprising:
attaching an interface for insertion into a standardized lighting socket.
28. The method of claim 27 , wherein the interface is compatible with an E12, E14, E26, E27, or GU-10 lighting standard.
29. The method of claim 27 , wherein the interface is compatible with a standard Edison-type lighting socket.
30. The method of claim 27 , wherein the interface is compatible with a standard fluorescent-type lighting socket.
31. The method of claim 1 , wherein the deposition steps further comprise at least one of the following types of deposition: printing, coating, rolling, spraying, layering, sputtering, lamination, screen printing, inkjet printing, electro-optical printing, electroink printing, photoresist printing, thermal printing, laser jet printing, magnetic printing, pad printing, flexographic printing, hybrid offset lithography, or Gravure printing.
32. A method of manufacturing an electronic apparatus, the method comprising:
printing a first conductive medium within a plurality of cavities of a base to form a plurality of first conductors;
printing within the plurality of cavities a plurality of substantially spherical substrate particles suspended in a carrier medium;
printing a dopant on first, upper portion the plurality of substantially spherical semiconductor substrate particles;
annealing the doped plurality of substantially spherical semiconductor substrate particles to form a plurality of substantially spherical diodes having at least a partially hemispherical shell pn junction;
printing an electrically insulating medium over a first portion of the plurality of substantially spherical diodes;
printing a second conductive medium over a second portion of the plurality of substantially spherical diodes to form a plurality of second conductors; and
printing a plurality of substantially spherical lenses suspended in a first polymer over the plurality of substantially spherical diodes, the plurality of substantially spherical lenses having at least a first index of refraction and the first polymer having at least a second, different index of refraction.