Monolithic high-side switch control circuits
View Patent ↗A high-side switch control circuit is provided. The high-side switch control circuit includes an on/off transistor, a bias resistor, a zener diode, a level-shifting transistor, and a current source. The on/off transistor operates as a switch. The bias resistor is coupled to turn off the on/off transistor. The zener diode is coupled to clamp the maximum voltage of the on/off transistor. The level-shifting transistor is coupled to turn on the on/off transistor. The current source is coupled to the level-shifting transistor. The current source limits the maximum current of the level-shifting transistor.
1. A monolithic high-side switch control circuit comprising:
an on/off transistor operated as a switch;
a bias resistor coupled to turn off the on/off transistor;
a zener diode coupled to clamp a maximum voltage of the on/off transistor;
a level-shifting transistor coupled to turn on the on/off transistor; and
a current source coupled to the level-shifting transistor;
wherein the current source limits a maximum current of the level-shifting transistor;
wherein the level-shifting transistor is located in a first circuit, the on/off transistor is located in a second circuit, and the second circuit is developed in an isolated well and isolated from the first circuit.
2. The monolithic high-side switch control circuit as claimed in claim 1 , wherein the first circuit is developed in a P silicon substrate.
3. The monolithic high-side switch control circuit as claimed in claim 1 further comprising:
a low-impedance resistor coupled to the current source; and
a low-impedance transistor coupled with the low-impedance resistor in series;
wherein the current source is coupled with the low-impedance resistor in parallel once the low-impedance transistor is turned on.
4. A monolithic high-side switch control circuit comprising:
an on/off transistor operated as a switch;
a bias resistor coupled to turn off the on/off transistor;
a zener diode coupled to clamp a maximum voltage of the on/off transistor;
a level-shifting transistor coupled to turn on the on/off transistor; and
a resistor coupled to a source terminal of the level-shifting transistor;
wherein a gate voltage of the level-shifting transistor is regulated, and the resistor limits a maximum current of the level-shifting transistor;
wherein the level-shifting transistor is located in a first circuit, the on/off transistor is located in a second circuit, and the second circuit is developed in an isolated well and isolated from the first circuit.
5. The monolithic high-side switch control circuit as claimed in claim 4 , wherein the first circuit is developed in a P-silicon substrate.
6. The monolithic high-side switch control circuit as claimed in claim 4 further comprising:
a low-impedance resistor coupled to the resistor;
a low-impedance transistor coupled with the low-impedance resistor in series;
wherein the resistor is coupled with the low-impedance resistor in parallel once the low-impedance transistor is turned on.