IP Library Granted Patent US 9,577,209
Granted Patent B2
US 9,577,209 · App. 13/367,833 · Granted Feb 21, 2017

Light-emitting device and manufacturing method thereof, lighting device, and display device

Inventors: Yoshifumi Tanada (Tochigi, JP); Naoya Sakamoto (Tochigi, JP); Hiroki Adachi (Tochigi, JP); Shingo Eguchi (Kanagawa, JP); Koji Ono (Tochigi, JP); Kensuke Yoshizumi (Kanagawa, JP); Hiroto Shinoda (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5212H01L27/3279H01L51/5228H01L2251/5361
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Quick Facts
Patent No.
US 9,577,209
App. No.
13/367,833
Granted
Feb 21, 2017
Kind
B2
Abstract

The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

Claims (56)

1. A light-emitting device comprising:

a transistor over a substrate;

a lower electrode layer over the transistor;

an insulating layer over and in direct contact with the lower electrode layer;

an auxiliary wiring over the insulating layer, wherein the auxiliary wiring is electrically isolated from the lower electrode layer;

an EL layer over the lower electrode layer and an upper surface of the insulating layer; and

an upper electrode layer over the EL layer and the insulating layer,

wherein the auxiliary wiring has conductivity,

wherein a bottom surface of the auxiliary wiring is in direct contact with a first surface of the insulating layer,

wherein the bottom surface is smaller than a projected area of the auxiliary wiring on the first surface,

wherein the upper electrode layer is electrically connected to the auxiliary wiring,

wherein the EL layer is in direct contact with the upper surface of the insulating layer in a cross-sectional view, and

wherein the upper electrode layer is in direct contact with the insulating layer and a side surface of the auxiliary wiring in the cross-sectional view.

2. The light-emitting device according to claim 1 , wherein there is a space between the side surface of the auxiliary wiring and a line connecting an outermost point in a bottom portion of the auxiliary wiring and a most protruding point in a side portion of the auxiliary wiring.

3. The light-emitting device according to claim 1 ,

wherein the upper electrode layer transmits light emitted from the EL layer, and

wherein the lower electrode layer reflects the light.

4. A lighting device comprising the light-emitting device according to claim 1 .

5. A display device comprising the light-emitting device according to claim 1 .

6. A method for manufacturing a light-emitting device, comprising the steps of:

forming a transistor over a substrate;

forming a lower electrode layer over the transistor;

forming an insulating layer over and in direct contact with the lower electrode layer;

forming an auxiliary wiring having conductivity;

forming an EL layer over the lower electrode layer and an upper surface of the insulating layer; and

forming an upper electrode layer over the EL layer and the insulating layer,

wherein the upper electrode layer is electrically connected to the auxiliary wiring,

wherein a bottom surface of the auxiliary wiring is in direct contact with a first surface of the insulating layer,

wherein the bottom surface is smaller than a projected area of the auxiliary wiring on the first surface,

wherein the EL layer is in direct contact with the upper surface of the insulating layer in a cross-sectional view, and

wherein the upper electrode layer is in direct contact with the insulating layer and a side surface of the auxiliary wiring in the cross-sectional view.

7. A light-emitting device comprising:

a transistor over a substrate;

a first electrode layer over the transistor;

an insulating layer over and in direct contact with the first electrode layer;

an auxiliary wiring over the insulating layer;

an EL layer over the first electrode layer and an upper surface of the insulating layer; and

a second electrode layer over the EL layer,

wherein the auxiliary wiring has conductivity,

wherein a bottom surface of the auxiliary wiring is in direct contact with the insulating layer,

wherein an area of a top surface of the auxiliary wiring is larger than an area of the bottom surface of the auxiliary wiring,

wherein the second electrode layer is electrically connected to the auxiliary wiring,

wherein the EL layer is in direct contact with the upper surface of the insulating layer in a cross-sectional view, and

wherein the second electrode layer is in direct contact with the insulating layer and a side surface of the auxiliary wiring in the cross-sectional view.

8. The light-emitting device according to claim 7 , wherein there is a space between the side surface of the auxiliary wiring and a line connecting an outermost point in a bottom portion of the auxiliary wiring and a most protruding point in a side portion of the auxiliary wiring.

9. The light-emitting device according to claim 7 ,

wherein the second electrode layer transmits light emitted from the EL layer, and

wherein the first electrode layer reflects the light.

10. A lighting device comprising the light-emitting device according to claim 7 .

11. A display device comprising the light-emitting device according to claim 7 .

12. The light-emitting device according to claim 6 , wherein there is a space between the side surface of the auxiliary wiring and a line connecting an outermost point in a bottom portion of the auxiliary wiring and a most protruding point in a side portion of the auxiliary wiring.

13. The light-emitting device according to claim 6 ,

wherein the upper electrode layer transmits light emitted from the EL layer, and

wherein the lower electrode layer reflects the light.

14. A lighting device comprising the light-emitting device according to claim 6 .

15. A display device comprising the light-emitting device according to claim 6 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2012
From: TANADA, YOSHIFUMI; SAKAMOTO, NAOYA; ADACHI, HIROKI; EGUCHI, SHINGO; ONO, KOJI; YOSHIZUMI, KENSUKE; SHINODA, HIROTO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 027665/0962 →
Priority Claims (1)
JP 2011-027602 · Feb 10, 2011 · national
Continuity (1)
Related Publication 20120205700A1 · Aug 16, 2012