Light-emitting device manufacturing method

1. A method for manufacturing a light-emitting device comprising the steps of:

providing a first substrate, a chip area, and a street area;

forming a light-emitting structure on the first substrate;

forming a conductive structure between the first substrate and the light-emitting structure;

removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area;

forming a first passivation layer on the light-emitting structure in the chip area;

forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer; and

forming a through-hole in the first passivation layer, and forming an electrode in the through-hole.

2. The method according to claim 1 , further comprising a step of forming a reflective layer between the light-emitting structure and the first substrate.

3. The method according to claim 1 , wherein forming the light-emitting structure comprising the steps of:

forming a first conductivity type group III-V compound semiconductor layer;

forming an active layer on the first conductivity type group III-V compound semiconductor layer; and

forming a second conductivity type group III-V compound semiconductor layer on the active layer.

4. The method according to claim 1 , wherein the sidewall of the light-emitting structure is a tilt sidewall.

5. The method according to claim 4 , wherein a tilt angle between the first substrate and the light-emitting structure is between 40° and 80°.

6. The method according to claim 1 , further comprising a step of dicing along a cutting line in the street area to form a plurality of light-emitting devices.

7. The method according to claim 1 , wherein the step of forming the conductive structure comprises the steps of:

forming a connecting region on the first substrate; and

forming a conductive region between the connecting region and the light-emitting structure.

8. The method according to claim 7 , wherein the material of the connecting region comprises metal, silver glue, conductive polymer, polymer material mixed with conductive material, or anisotropic conductive film.

9. The method according to claim 1 , wherein a refraction index of the first passivation layer and/or the second passivation layer is different from that of the light-emitting structure.

10. The method according to claim 1 , wherein the first passivation layer and/or the second passivation layer is a single-layer structure or a multilayer structure.

11. The method according to claim 1 , wherein the material of the first passivation layer and/or the second passivation layer comprises dielectric material.

12. The method according to claim 11 , wherein the material of the first passivation layer and the second passivation layer are the same or different.

13. The method according to claim 1 , wherein the first substrate is conductive.

14. The method according to claim 1 , wherein the step of forming the light-emitting structure on the first substrate comprises a step of providing a second substrate for growing the light-emitting structure.

15. The method according to claim 14 , wherein the step of forming the light-emitting structure on the first substrate further comprises a step of separating the light-emitting structure from the second substrate and bonding the light-emitting structure to the first substrate.

16. A method for manufacturing a light-emitting device comprising the steps of:

providing a first substrate, a chip area, and a street area;

forming a light-emitting structure on the first substrate;

forming a conductive structure between the first substrate and the light-emitting structure;

removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area;

forming a first passivation layer on the light-emitting structure in the chip area; and

forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer;

wherein the step of removing a part of the light-emitting structure comprises the steps of:

dry etching a part of the light-emitting structure in the street area; and

wet etching a remaining part of the light-emitting structure in the street area.

17. The method according to claim 16 , wherein the dry etching step comprises using inductively coupled plasma etching.

18. The method according to claim 16 , wherein the wet etching step comprises using a solution containing H 3 PO 4 .

19. A method for manufacturing a light-emitting device comprising the steps of:

providing a first substrate, a chip area, and a street area;

forming a light-emitting structure on the first substrate;

forming a conductive structure between the first substrate and the light-emitting structure;

removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area;

forming a first passivation layer on the light-emitting structure in the chip area; and

forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer;

wherein one of the first passivation layer and the second passivation layer is a single-layer structure or a multilayer structure, wherein one of the first passivation layer and the second passivation layer comprises a DBR structure.