Micro light emitting diode

1. A micro LED structure comprising:

a micro p-n diode;

a metallization layer;

wherein the metallization layer is between the micro p-n diode and a bonding layer formed on a substrate; and

a conformal barrier layer comprising a single layer of a same material that spans sidewalls of the micro p-n diode, sidewalls of the metallization layer, and sidewalls of the bonding layer.

2. The micro LED structure of claim 1 , wherein the bonding layer has a liquidus temperature below approximately 350° C.

3. The micro LED structure of claim 1 , wherein the conformal barrier layer forms an outline of the topography of the sidewalls of the micro p-n diode, the sidewalls of the metallization layer, and the sidewalls of the bonding layer.

4. The micro LED structure of claim 1 , wherein the single layer of the same material is a conformal dielectric barrier layer that partially spans a bottom surface of the micro p-n diode.

5. The micro LED structure of claim 4 , further comprising an opening in the conformal dielectric barrier layer exposing a top surface of the micro p-n diode, wherein the opening has a width selected from the group consisting of:

greater than a width of the top surface of the micro p-n diode;

less than the width of the top surface of the micro p-n diode; and

approximately the same as the width of the top surface of the micro p-n diode.

6. The micro LED structure of claim 1 , wherein:

the micro p-n diode comprises a top surface and a bottom surface;

the metallization layer comprises a top surface and a bottom surface; and

the bottom surface of the micro p-n diode is wider than the top surface of the metallization layer.

7. The micro LED structure of claim 1 , wherein the bonding layer comprises indium or tin.

8. The micro LED structure of claim 1 , wherein the bonding layer comprises polyethylene or polypropylene.

9. The micro LED structure of claim 1 , wherein the micro p-n diode comprises gallium nitride.

10. The micro LED structure of claim 1 , wherein the metallization layer comprises an electrode layer and a barrier layer between the electrode layer and the bonding layer.

11. The micro LED structure of claim 1 , wherein the micro p-n diode comprises a top surface, a bottom surface and tapered sidewalls.

12. The micro LED of claim 11 , wherein the bottom surface is wider than the top surface.

13. The micro LED of claim 11 , wherein the top surface is wider than the bottom surface or has a same width as the bottom surface.

14. The micro LED structure of claim 1 , wherein:

the micro p-n diode comprises a top surface and a bottom surface;

the bonding layer comprises a top surface and a bottom surface; and

the bottom surface of the micro p-n diode is wider than the top surface of the bonding layer.

15. The micro LED structure of claim 1 , wherein:

the micro p-n diode comprises a top surface and a bottom surface;

the bonding layer comprises a top surface and a bottom surface; and

the bottom surface of the micro p-n diode is approximately the same width as the top surface of the bonding layer.

16. The micro LED structure of claim 1 , wherein the single layer of the same material that spans the sidewalls of the micro p-n diode, the sidewalls of the metallization layer, and the sidewalls of the bonding layer is continuous.

17. The micro LED structure of claim 1 , wherein the same material comprises Al 2 O 3 .

18. A micro LED array comprising:

a plurality of locations of a bonding layer on a substrate;

a corresponding plurality of micro LED structures on the plurality of locations of the bonding layer, wherein each micro LED structure comprises:

a micro p-n diode; and

a metallization layer, wherein the metallization layer is between the micro p-n diode and a respective location of the bonding layer; and

a conformal barrier layer comprising a single layer of a same material that spans sidewalls of each micro p-n diode, sidewalls of each metallization layer, and sidewalls of each of the plurality of locations of the bonding layer.

19. The micro LED array of claim 18 , wherein the bonding layer has a liquidus temperature below approximately 350° C.

20. The micro LED array of claim 18 , wherein the conformal barrier layer forms an outline of the topography of the sidewalls of the micro p-n diode, the sidewalls of the metallization layer, and the sidewalls of the bonding layer.

21. The micro LED array of claim 18 , wherein the single layer of the same material is a conformal dielectric barrier layer that partially spans a bottom surface of each micro p-n diode.

22. The micro LED structure of claim 21 , further comprising a plurality of openings in the conformal dielectric barrier layer exposing a top surface of each micro p-n diode, wherein each opening has a width selected from the group consisting of:

greater than a width of the top surface of a corresponding micro p-n diode;

less than the width of the top surface of the corresponding micro p-n diode; and

approximately the same as the width of the top surface of corresponding micro p-n diode.

23. The micro LED structure of claim 18 , wherein the plurality of locations of the bonding layer are laterally separate.

24. The micro LED array of claim 23 , wherein the substrate comprises a respective plurality of pillars, and the plurality of locations of the bonding layer are formed on the respective plurality of pillars.

25. The micro LED array of claim 24 , wherein each micro p-n diode comprises a bottom surface which is approximately the same width as a top surface a respective pillar.

26. The micro LED array of claim 24 , wherein each micro p-n diode comprises a bottom surface which is wider than width of a top surface a respective pillar.

27. The micro LED array of claim 24 , wherein the respective plurality of pillars each have a respective height which is greater than a respective thickness of each of the locations of the bonding layer.

28. The micro LED array of claim 27 , wherein each respective height is at least twice the respective thickness.

29. The micro LED array of claim 18 , wherein the plurality of locations of the bonding layer are not laterally separate.

30. The micro LED array of claim 18 , wherein:

each micro p-n diode comprises a top surface and a bottom surface;

each metallization layer comprises a top surface and a bottom surface; and

the bottom surface of each micro p-n diode is wider than the corresponding top surface of the metallization layer.

31. The micro LED array of claim 18 , wherein each micro p-n diode comprises a top surface and a bottom surface which is wider than the top surface.

32. The micro LED structure of claim 18 , wherein each portion of the single layer of the same material that spans the sidewalls of the each micro p-n diode, the sidewalls of the each metallization layer, and the sidewalls of the each bonding layer is continuous.

33. The micro LED structure of claim 18 , wherein the same material comprises Al 2 O 3 .