Solid-state imaging device

1. A solid-state imaging device comprising:

a substrate;

a photoelectric conversion section configured to convert incident light into a signal charge, the photoelectric conversion section being disposed on said substrate and including an impurity region having a carrier polarity of a first conductivity type;

a first impurity layer being disposed on said substrate, having a carrier polarity of a second conductivity type opposite from said first conductivity type, and having a first impurity concentration;

a charge-to-voltage converting section configured to convert said signal charge converted by said photoelectric conversion section into voltage, the charge-to-voltage converting section being disposed on said first impurity layer and including an impurity region having a carrier polarity of said first conductivity type;

an amplifying section configured to amplify said voltage converted by said charge-to-voltage converting section, the amplifying section being disposed on said first impurity layer and including a source/drain region having a carrier polarity of said first conductivity type; and

a second impurity layer disposed in a region between said photoelectric conversion section and said amplifying section, having a carrier polarity of said second conductivity type, and having a second impurity concentration higher than said first impurity concentration.

2. The solid-state imaging device according to claim 1 , further comprising:

a transfer section configured to transfer said signal charge from said photoelectric conversion section to said charge-to-voltage converting section, the transfer section being disposed in a region between said photoelectric conversion section and said charge-to-voltage converting section; and

a third impurity layer disposed in a region of said transfer section on a side of said substrate, having a carrier polarity of said second conductivity type, and having a third impurity concentration higher than said first impurity concentration and equal to or lower than said second impurity concentration.

3. The solid-state imaging device according to claim 2 ,

wherein a distance between a surface of said third impurity layer on the side of said substrate and said substrate in a direction of thickness of said substrate is equal to or more than a distance between a surface of said first impurity layer on the side of said substrate and said substrate in the direction of thickness of said substrate.

4. The solid-state imaging device according to claim 1 ,

wherein a distance between a surface of said second impurity layer on a side of said substrate and said substrate in a direction of thickness of said substrate is equal to or more than a distance between a surface of said first impurity layer on the side of said substrate and said substrate in the direction of thickness of said substrate.

5. The solid-state imaging device according to claim 1 , further comprising

an element isolation layer formed by a technique of one of LOCOS and STI between said photoelectric conversion section and said amplifying section.

6. The solid-state imaging device according to claim 1 , further comprising:

a plurality of said photoelectric conversion sections arranged in a predetermined direction; and

a diffusion isolation layer formed by a technique of diffusion isolation in a region between said photoelectric conversion sections adjacent to each other in said predetermined direction.

7. The solid-state imaging device according to claim 1 ,

wherein said second impurity layer is disposed within said first impurity layer.

8. The solid-state imaging device according to claim 1 ,

wherein said first conductivity type is an N-type, and said second conductivity type is a P-type.