Optoelectronic semiconductor component
View Patent ↗An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.
1. An optoelectronic semiconductor component comprising
a first carrier having a topside and an underside lying opposite the top side of the first carrier, wherein the first carrier has a first and a second region;
at least one optoelectronic semiconductor chip arranged at the to side on the first carrier; and
at least one electronic component arranged in the second region at the underside of the first carrier,
wherein the first region has a greater thickness in a vertical direction than the second region,
at the underside, the first region projects beyond the second region in a vertical direction,
the at least one electronic component electrically conductively connects to the at least one optoelectronic semiconductor chip,
the optoelectronic semiconductor chip electrically conductively connects to a further carrier with a bonding wire and the electronic component electrically conductively connects to the further carrier with a further bonding wire, and
the first carrier and the further carrier are electrically insulated in a lateral direction by a housing body and the lateral direction is a direction parallel to the to side or the underside of the first carrier.
2. The optoelectronic semiconductor component according to claim 1 , wherein the at least one electronic component does not project beyond the first carrier in a vertical direction.
3. The optoelectronic semiconductor component according to claim 1 , wherein the second region is formed by an undercut in the first carrier.
4. The optoelectronic semiconductor component according to claim 1 , wherein the second region is formed by a cutout in the first carrier.
5. The optoelectronic semiconductor component according to claim 1 , wherein the second region borders the first region at at least three sides.
6. The optoelectronic semiconductor component according to claim 1 , wherein the at least one optoelectronic semiconductor chip is bordered laterally by a housing body.
7. The optoelectronic semiconductor component according to claim 6 , wherein the housing body reshapes the at least one electronic component at least in selected places.
8. The optoelectronic semiconductor component according to claim 6 , wherein the housing body does not project beyond the first region in a vertical direction at the underside.
9. The optoelectronic semiconductor component according to claim 6 , wherein the housing body mechanically connects the first carrier to the further carrier.
10. The optoelectronic semiconductor component according to claim 1 , wherein the at least one electronic component contains a protective circuit that protects against damage caused by electrostatic charging.
11. The optoelectronic semiconductor component according to claim 1 , wherein the at least one electronic component contains a drive circuit for the at least one optoelectronic semiconductor chip.