APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
Disclosed is an apparatus ( 1 ) for manufacturing single crystals, comprising: a crucible main body ( 5 ) for holding a sublimation material; a lid member ( 9 ) provided with a seed crystal supporting member ( 7 ) at a position facing the sublimation material; a tubular guide member ( 11 ) extending from the vicinity of the outer periphery of the seed crystal supporting member ( 7 ) toward the sublimation material; and a heat insulating material ( 21 ) that is positioned on the outer periphery side of at least one of the seed crystal supporting member ( 7 ) and the guide member ( 11 ) and has a lower heat conductivity than single crystals ( 27 ), when growing the single crystals ( 27 ) by heating the sublimation material ( 3 ) and the seed crystals, the heat-insulating material ( 21 ) makes the flow of the heat (H) from the sublimation material ( 3 ) toward the seed crystals concentrate on the seed crystals.
1 . An apparatus of manufacturing a silicon carbide single crystal, comprising:
a crucible main body housing a sublimation material;
a lid member including a seed crystal supporting member configured to fix a seed crystal at a position facing the sublimation material;
a guide member of a cylindrical shape extending from the vicinity of an outer periphery of the seed crystal supporting member toward the sublimation material; and
a heat insulating material arranged at an outer peripheral side of at least one of the seed crystal supporting member and the guide member, and having a heat conductivity lower than a heat conductivity of the single crystal, wherein
when the sublimation material and the seed crystal are heated to grow the single crystal, a flow of heat traveling from the sublimation material to the seed crystal is concentrated onto the seed crystal by the heat insulating material.
2 . An apparatus of manufacturing a silicon carbide single crystal, comprising:
a crucible main body housing a sublimation material;
a lid member including a seed crystal supporting member configured to fix a seed crystal at a position facing the sublimation material; and
a guide member of cylindrical shape extending from the vicinity of an outer periphery of the seed crystal supporting member toward the sublimation material, wherein
as a result of the guide member being made of a heat insulating material having a heat conductivity lower than a heat conductivity of the single crystal, when the sublimation material and the seed crystal are heated to grow the single crystal, a flow of heat traveling from the sublimation material to the seed crystal is concentrated onto the seed crystal by the heat insulating material.
3 . The apparatus of manufacturing a silicon carbide single crystal according to claim 2 , wherein
the guide member is formed in a cylindrical shape, and
an inner peripheral surface of the guide member is formed such that a diameter expands obliquely from an outer peripheral surface side of the seed crystal supporting member to the sublimation material, and an outer peripheral surface of the guide member contacts with an inner wall surface of the crucible main body.