Graphene defect alteration
View Patent ↗Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
1. A method for at least partially altering a defect area in a layer on a substrate, wherein the layer includes graphene, the method comprising:
receiving the layer, wherein the layer includes at least some defect areas in the graphene; and
exposing the layer to a gas, wherein the gas includes hydrogen and at least one of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In) and/or Thallium (Tl), where exposure of the layer to the gas at least partially alters the defect area.
2. The method as recited in claim 1 , wherein exposing the layer to the gas further comprises exposing the layer to a gas that includes a borane or an alane.
3. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
exposing the layer to a second gas effective to produce an exposed layer, wherein the second gas includes an amine; and thereafter
exposing the exposed layer to the first gas.
4. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
exposing the layer to a second gas effective to produce an exposed layer, wherein the second gas includes an amine; and thereafter
exposing the exposed layer to the first gas, wherein the first gas includes a borane or an alane.
5. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
exposing the layer to a second gas effective to produce an exposed layer, wherein the second gas includes at least one of pyrrolidine, piperidine and/or diethylamine; and thereafter
exposing the exposed layer to the first gas, wherein the first gas includes a borane or an alane.
6. The method as recited in claim 1 , wherein exposing the layer to the gas further comprises exposing the layer to a gas that includes at least one of diborane, 9-borabicyclo(3.3.1)nonarie, diisobutylaluminium hydride, and/or aluminum hydride.
7. The method as recited in claim 1 , further comprising:
exposing the layer to piperidine effective to produce an exposed layer; and thereafter
exposing the exposed layer to 9-borabicyclo(3.3.1)nonane.
8. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
exposing the layer to a second gas effective to produce a first exposed layer, wherein the second gas includes an amine;
exposing the first exposed layer to a first inert gas effective to produce a second exposed layer;
exposing the second exposed layer to the first gas effective to produce a third exposed layer; and
exposing the third exposed layer to a second inert gas.
9. The method as recited in claim 1 , further comprising, after exposing the layer to the gas, heating the layer to a temperature in a range of about 150 degrees Celsius to about 300 degrees Celsius.
10. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
heating the layer to a temperature in a range of about 80 degrees Celsius to about 150 degrees Celsius effective to produce a heated layer;
exposing the heated layer to a second gas effective to produce a first exposed layer, wherein the second gas includes an amine;
exposing the first exposed layer to a first inert gas effective to produce a second exposed layer;
exposing the second exposed layer to the first gas effective to produce a third exposed layer;
exposing the third exposed layer to a second inert gas effective to produce a fourth exposed layer; and
heating the fourth exposed layer to a temperature in a range of about 150 degrees Celsius to about 300 degrees Celsius.
11. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
heating the layer to a temperature in a range of about 80 degrees Celsius to about 150 degrees Celsius effective to produce a heated layer;
exposing the heated layer to a second gas effective to produce a first exposed layer, wherein the second gas includes an amine;
exposing the first exposed layer to a first inert gas effective to produce a second exposed layer;
exposing the second exposed layer to the first gas effective to produce a third exposed layer, wherein the first gas includes an alane or a borane;
exposing the third exposed layer to a second inert gas effective to produce a fourth exposed layer; and
heating the fourth exposed layer to a temperature in a range of about 150 degrees Celsius to about 300 degrees Celsius.
12. The method as recited in claim 1 , wherein the gas is a first gas and the method further comprises:
heating the layer to a temperature in a range of about 80 degrees Celsius to about 150 degrees Celsius effective to produce a heated layer;
exposing the heated layer to a second gas effective to produce a first exposed layer, wherein the second gas includes an amine;
exposing the first exposed layer to a first inert gas effective to produce a second exposed layer;
exposing the second exposed layer to the first gas effective to produce a third exposed layer, wherein the first gas includes at least one of diborane, 9-borabicyclo(3.3.1)nonane, diisobutylaluminium hydride, and/or aluminum hydride;
exposing the third exposed layer to a second inert gas effective to produce a fourth exposed layer; and
heating the fourth exposed layer to a temperature in a range of about 150 degrees Celsius to about 300 degrees Celsius.