IP Library Granted Patent US 8,925,371
Granted Patent B2
US 8,925,371 · App. 13/382,726 · Granted Jan 6, 2015

Sensor

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Quick Facts
Patent No.
US 8,925,371
App. No.
13/382,726
Granted
Jan 6, 2015
Kind
B2
Abstract

A sensor ( 2 ) for sensing a first substance and a second substance, the sensor comprising first ( 3 ) and second ( 5 ) sensor components each comprising a first material ( 20 ), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier ( 18 ) for preventing the second substance from passing into the second sensor component ( 5 ).

Claims (23)

1. A sensor for sensing a first substance and a second substance, the sensor comprising:

first and second sensor components each comprising a first material, the first material being sensitive to both the first substance and the second substance; and

a barrier for at least reducing penetration of the second substance into the second sensor component so that the second sensor component is able to sense levels of the first substance and not the second substance, whereas the first sensor component is able to sense levels of both the first and the second substances; and

wherein the barrier further comprises a pillar extending through the first material.

2. A sensor according to claim 1 further comprising a substrate, wherein the first material comprises a layer extending over a first surface of the substrate.

3. A sensor according to claim 1 wherein the barrier comprises a barrier layer formed from a nanocomposite material.

4. A sensor according to claim 3 wherein the nanocomposite material comprises a nanoclay inserted into a polymer matrix.

5. A sensor according to claim 4 wherein the polymer matrix comprises a polyimide.

6. A sensor according to claim 1 wherein the first sensor component comprises a first capacitor having a first dielectric formed from the first material, and the second sensor component comprises a second capacitor having a second dielectric formed from the first material.

7. A sensor according to claim 1 , wherein the first sensor component comprises a first resistor, the second sensor component comprises a second resistor, and the first material comprises a resistive material.

8. A sensor according to claim 1 wherein the first sensor component comprises a plurality of first electrodes embedded in the first material.

9. A sensor according claim 8 wherein the second sensor component comprises a plurality of second electrodes embedded in the second material.

10. A sensor according to claim 9 wherein the first and second electrodes are formed from aluminum.

11. A sensor according to claim 1 further comprising a heater.

12. A sensor according to claim 11 , wherein the heater comprises a layer embedded in the substrate.

13. A method of forming a sensor for sensing levels of a first substance and a second substance, the method comprising:

depositing a first layer of a first material on a substrate, the first layer being formed from a material that is sensitive to both the first substance and the second substance;

forming first and second sensor components from the first material; and

depositing a second layer on the first material to form a barrier to at least reduce penetration of the second substance into the second sensor component so that the second sensor component is able to sense levels of the first substance but not the second substance, whereas the first sensor component is able to sense levels of both the first and second substances; and

wherein the step of forming the first and second sensor components comprises, prior to the step of depositing the first layer on the substrate:

depositing a layer of second material onto the substrate; and

patterning and etching the second layer to form a plurality of first electrodes forming part of the first sensor component and a plurality of second electrodes forming part of the second sensor components.

14. A method according claim 13 wherein the first sensor component comprises a first capacitor having a first dielectric formed from the first material, and the second sensor component comprises a second capacitor having a second dielectric formed from the first material.

Assignments (13)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: AMS AG; AMS INTERNATIONAL AG; AMS SENSORS UK LIMITED; AMS SENSORS GERMANY GMBH
To: SCIOSENSE B.V.
Reel/Frame 052769/0820 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2015
From: NXP B.V.
To: AMS INTERNATIONAL AG
Reel/Frame 036015/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2012
From: HUMBERT, AURELIE; PONOMAREV, YOURI VICTOROVITCH; DAAMEN, ROEL; MERZ, MATTHIAS
To: NXP B.V.
Reel/Frame 027667/0599 →