Nanowire sensor with angled segments that are differently functionalized

1. A nanowire device comprising:

at least one nanowire having a plurality of differently functionalized segments, wherein each of the segments has a conductance that modulates based on interaction with at least one species, wherein

the segments include a first segment at a non-linear angle from a second segment, and

the at least one species comprises a first species and a second different species, and the first segment is to change its conductive state by interacting with the first species, and the second segment is to change its conductive state by interacting with the second species.

2. The nanowire device of claim 1 , wherein the at least one nanowire comprises a kink and the kink forms the non-linear angle between the first segment and the second segment.

3. The nanowire device of claim 2 , further comprising:

a first layer including electrically isolated regions; and

a second layer,

wherein the first segment is before the kink and is between the first layer and the second layer and the second segment is after the kink and between the second layer and the first layer.

4. The nanowire device of claim 3 , wherein a first electrode and a third electrode are on the first layer and a second electrode is on the second layer, and the first segment is connected between the first and second electrodes and the second segment is connected between the second and third electrodes.

5. The nanowire device of claim 3 , wherein the first and second segments are symmetric.

6. The nanowire device of claim 1 , wherein the first segment and the second segment are to interact with the at least one species by changing a conductive state of the first and second segments.

7. The nanowire device of claim 1 , further comprising a sensor logic gate, and the sensor logic gate operates as a logic gate based on the interaction of the first and second segments with the first and second species, respectively.

8. The nanowire device of claim 7 , wherein the sensor logic gate comprises one of a NAND, AND, NOR, OR, NOT, and XOR gate.

9. The nanowire device of claim 1 , further comprising a transistor, and a region of the at least one nanowire near an angled junction of the first and second segments is oppositely doped from another region in the at least one nanowire.

10. The nanowire device of claim 1 , wherein each segment is heated in the presence of a coating material to functionalize the segment.

11. The nanowire device of claim 10 , wherein each segment bridges electrodes formed on layers in the nanowire device, and each segment is heated by applying a current using the bridged electrodes.

12. The nanowire device of claim 1 , further comprising:

a top silicon layer including electrically isolated regions;

a middle silicon oxide layer;

a bottom silicon layer; and

a trench in the middle silicon oxide layer, wherein the first segment is grown at a first angle in the trench from the top silicon layer to the bottom silicon layer, and the second segment is grown at a second angle in the trench from the bottom silicon layer to the top silicon layer.

13. The nanowire device of claim 12 , wherein the trench comprises over-hangs comprised of non-connected sections of the top layer, and the first segment is grown from a bottom surface of a first of the overhangs, and the second segment is grown to a bottom surface of a second of the overhangs.

14. The nanowire device of claim 13 , further comprising a plurality of transistors, and a base connection of each transistor is formed on the bottom silicon layer and the base connections are isolated from each other.

15. A nanowire sensor logic device comprising:

at least one nanowire having a first functionalized segment configured to change its conductive state by interacting with a first species, and a second differently functionalized segment configured to change its conductive state by interacting with a second species different from the first species, and the segments interacting with the species simulate operation of a logic gate,

wherein the at least one nanowire is grown from a single catalyst and the first segment is at a non-linear angle from the second segment.

16. The nanowire sensor logic device of claim 15 , wherein the logic gate comprises one of a NAND, AND, NOR, OR, NOT, and XOR gate.

17. The nanowire device of claim 15 , wherein each segment bridges electrodes, formed between layers in the nanowire sensor logic device, and each segment is heated by applying a current using the bridged electrodes to functionalize each segment.

18. A nanowire device comprising:

a top silicon layer;

a middle silicon oxide layer;

a bottom silicon layer;

a trench in the middle silicon oxide layer; and

at least one nanowire grown from a single catalyst and having a first segment and a second segment, wherein the first segment is grown at a first angle in the trench from the top silicon layer to the bottom silicon layer, and the second segment is grown at a second angle in the trench from the bottom silicon layer to the top silicon layer.

19. The nanowire device of claim 18 , further comprising a transistor, and a region of the at least one nanowire near an angled junction of the first and second segments is oppositely doped from another region in the at least one nanowire.