Optical component having reduced dependency on etch depth
View Patent ↗An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.
1. An optical device, comprising:
an active component on a base and having at least one functionality selected from a group consisting of light sensor functionality and light modulator functionality; and
the active component configured to guide the light signal through a ridge of an active medium extending upwards from slab regions located on opposing sides of the ridge,
the ridge of active medium being positioned on a light-transmitting medium located between the ridge and the base,
a doped region extending into a lateral side of the ridge of the active medium and also extending into one of the slab regions such that at least a portion of the doped region is located in the light-transmitting medium.
2. The device of claim 1 , wherein the slab region into which the doped region extends includes the active medium.
3. The device of claim 2 , wherein the doped region extends into the active medium included in the slab region.
4. The device of claim 1 , wherein the slab regions exclude the active medium.
5. The device of claim 1 , wherein the doped region is located under the ridge such that a line that is perpendicular to the base can extend through the ridge and also through a portion of the light-transmitting medium that includes the doped region.
6. The device of claim 1 , wherein the doped region extends through the light-transmitting medium and contacts the base.
7. The device of claim 1 , wherein the doped region extends further into the slab region than into the ridge.
8. The device of claim 1 , wherein multiple doped zones combine to form each one of the doped regions.
9. The device of claim 8 , wherein one of the doped zones included in the doped region is a first doped zone and another one of the doped zones included in the doped region is a second doped zone,
the first doped zone being located in one of the slab regions but not in the ridge and the second doped zone being located in both the ridge and in one of the slab regions.
10. The device of claim 8 , wherein one of the doped zones included in the doped region is a first doped zone and another one of the doped zones included in the doped region is a second doped zone,
the first doped zone being located in the light-transmitting medium but not in the active medium.
11. The device of claim 1 , wherein the doped region is one a plurality of doped regions included on the active component and at least two of the doped regions are located in the slab regions on opposing sides of the ridge.
12. The device of claim 1 , further comprising:
a waveguide on the base and configured to guide the light signal through the light-transmitting medium, the active component positioned such that the ridge of active medium receives the light signal from the waveguide.
13. A method of forming an optical device comprising:
generating a device precursor having a light-transmitting medium on a base,
forming a first doped zone in the light-transmitting medium,
forming a ridge in an active medium located on the light-transmitting medium,
the ridge being formed such that the ridge extends upwards from slab regions located on opposing sides of the ridge,
forming a second doped zone that combines with the first doped zone to form a continuous doped region for the active component, the doped region extending into both the ridge and into one of the slab regions.
14. The method of claim 13 , wherein the ridge is formed over a portion of the first doped zone such that a line that is perpendicular to the base can extend both the ridge and the portion of the first doped region.
15. The method of claim 13 , wherein the first doped zone does not extend into the active medium.
16. The method of claim 13 , wherein the ridge is formed after the first doped zone is formed.
17. The method of claim 13 , wherein the second doped zone is formed after the ridge is formed.
18. The method of claim 13 , wherein the device precursor is annealed before the device precursor includes the active medium.
19. The method of claim 18 , wherein the device precursor is annealed between forming the first doped regions and forming the ridge.
20. The method of claim 18 , wherein the device precursor is annealed at a temperature above 700° C.