Integration of components on optical device

1. An optical system, comprising:

a Fabry-Perot laser positioned on a base and including a gain medium from which an output light signal is generated;

a modulator positioned on the base,

the modulator including an electro-absorption medium configured to receive at least a portion of the output light signal from the laser,

the electro-absorption medium and the gain medium being different materials,

field sources that serve as a source of an electrical field in the electro-absorption medium,

the electro-absorption medium being a medium in which the Franz-Keldysh effect occurs in response to the formation of the electrical field in the electro-absorption medium; and

a peak in an efficiency versus wavelength profile of the modulator being within 20 nm of the peak of the intensity versus wavelength profile for the laser both before and after both the modulator and the laser experience a temperature change of more than 70° C.

2. The system of claim 1 , wherein the peak in the efficiency versus wavelength profile of the modulator is within 15 nm of the peak of the intensity versus wavelength profile for the laser both before and after both the modulator and the laser experience a temperature change of more than 70° C.

3. The system of claim 2 , wherein the peak in the efficiency versus wavelength profile of the modulator is within 10 nm of the peak of the intensity versus wavelength profile for the laser both before and after both the modulator and the laser experience a temperature change of more than 70° C.

4. The system of claim 1 , wherein when the peak of the efficiency versus wavelength profile for the modulator is within 5 nm of the peak of the intensity versus wavelength profile for the laser when the modulator and laser are at a temperature of 25° C.

5. The system of claim 4 , wherein when the modulator and laser are at the temperature 25° C. and the modulator and laser both experience a temperature shift of more than 70° C., the peak of the intensity versus wavelength profile for the laser remains within 20 nm of the peak of the intensity versus wavelength profile for the modulator.

6. The system of claim 1 , wherein the gain medium includes Ge 1-x Si x where x is in a range of 0 to 0.4.

7. The system of claim 1 , wherein the gain medium includes GaAs.

8. The system of claim 7 , wherein the gain medium includes Al x Ga (1-x) As and x is 0.1 to 0.4.

9. The system of claim 1 , wherein a ridge of the gain medium extends upwards from slab regions positioned on opposing sides of the ridge,

the ridge including lateral sides connected to a top of the ridge, and

the field sources contacting the lateral sides on opposing sides of the ridge.

10. The system of claim 9 , wherein doped region of the gain medium serve as the field sources.

11. The system of claim 1 , wherein a ridge of the gain medium extends upwards from slab regions positioned on opposing sides of the ridge,

the field sources include doped regions of the gain medium positioned on opposing sides of the ridge.

12. The system of claim 1 , wherein the base includes a silicon substrate of a silicon-on-insulator wafer.

13. The system of claim 1 , further comprising:

a waveguide positioned on the base so as to receive a modulated light signal from the modulator, the waveguide configured to guide the received light signal through a light-transmitting medium.

14. The system of claim 13 , wherein the waveguide is partially defined by a ridge of the light-transmitting medium extending upward from the base.

15. The system of claim 14 , wherein a portion of the light-transmitting medium is located between the gain medium and the base.

16. The system of claim 1 , wherein the base is the base of a planar optical device.