IP Library Granted Patent US 9,041,388
Granted Patent B2
US 9,041,388 · App. 13/387,318 · Granted May 26, 2015

Non-contact current sensor

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,041,388
App. No.
13/387,318
Granted
May 26, 2015
Kind
B2
Abstract

A non-contact current censor includes a spin valve structure ( 2 ), an electrical unit ( 4 ) that applies a varying current to the spin valve structure ( 2 ), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure ( 2 ). When a current-induced magnetic field is detected, a coercive force of a free layer ( 14 ) is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit ( 4 ) allows the magnetization directions of a pinned layer ( 12 ) and the free layer ( 14 ) to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure ( 2 ). The resistance reading unit ( 5 ) detects a threshold value corresponding to the transition.

Claims (9)

1. A non-contact current sensor comprising:

a wire through which a current flows;

a spin valve structure to detect a magnetic field around the wire induced by the current, the spin valve structure being disposed adjacent the wire and including a free layer having a direction of magnetization, a pinned layer having a direction of magnetization, and a nonmagnetic layer arranged between the free layer and the pinned layer, the free layer having a coercive force that is larger than the current-induced magnetic field;

an electrical unit that applies a current to the spin valve structure to cause the directions of magnetization of the pinned layer and the free layer to transition between a mutually parallel state and a mutually anti-parallel state; and

a resistance reading unit that electrically reads out a resistance value of the spin valve structure when the current-induced magnetic field is detected,

wherein the resistance reading unit is configured to detect a threshold value of the current corresponding to the transition between the parallel state and the anti-parallel state so as to determine a resistance value of the spin valve structure at the transition.

2. The non-contact current sensor according to claim 1 , further comprising at least one additional spin valve structure, the spin valve structures having different areas and being connected in series.

3. The non-contact current sensor according to claim 1 , wherein the electrical unit comprises a pulse source, a pulse height changing with every pulse.

4. The non-contact current sensor according to claim 1 , wherein the electrical unit comprises a pulse source, a pulse width changing with every pulse.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 6, 2015
From: FUJI ELECTRIC CO., LTD.
To: INTELLECTUALS HIGH-TECH KFT.
Reel/Frame 034910/0351 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 6, 2015
From: INTELLECTUALS HIGH-TECH KFT.
To: III HOLDINGS 3, LLC
Reel/Frame 034910/0761 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2012
From: OGIMOTO, YASUSHI
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 027994/0356 →