Substrate processing method
A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.
1. A substrate processing method for forming a space extending along a cutting line in a silicon substrate, the method comprising:
a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the silicon substrate so as to form a plurality of modified spots within the silicon substrate along the cutting line and cause a modified region including the plurality of modified spots; and
a second step of anisotropically etching the silicon substrate after the first step so as to advance an etching selectively along the modified region and form the space in the silicon substrate;
wherein, in the first step, the laser light is converged at the silicon substrate in a first mode when forming the plurality of modified spots align in a plurality of rows along the cutting line, and in a second mode when forming the plurality of modified spots align in a single row along the cutting line,
wherein in the first mode, an angle between a moving direction of the laser light with respect to the silicon substrate and a direction of polarization of the laser light is less than 45°, and in the second mode, an angle between a moving direction of the laser light with respect to the silicon substrate and a direction of polarization of the laser light is more than 45°.
2. A substrate processing method according to claim 1 , wherein, in the first step, the plurality of modified spots are formed to align in a plurality of rows along the cutting line when seen in a predetermined direction perpendicular to an incident direction of the laser light with respect to the silicon substrate.
3. A substrate processing method according to claim 1 , wherein, in the first step, the plurality of modified spots are formed to align in a plurality of rows along the cutting line when seen in an incident direction of the laser light with respect to the silicon substrate.
4. A substrate processing method according to claim 1 , wherein, in the first step, the laser light is converged at the silicon substrate such that the moving direction of the laser light and the direction of polarization of the laser light form an angle of 0° therebetween.
5. A substrate processing method according to claim 1 , wherein the elliptically-polarized light is a linearly-polarized light having an ellipticity of 0.
6. A substrate processing method according to claim 1 , wherein the space is a through hole opening to front and rear faces of the silicon substrate.
7. A substrate processing method for forming a space extending along a cutting line in a silicon substrate, the method comprising:
a first step of converging an elliptically-polarized laser light having an ellipticity other than 1 at the silicon substrate and moving the laser light so as to form a plurality of modified spots align in a plurality of rows along the cutting line within the silicon substrate and cause a modified region including the plurality of modified spots, such that an angle between a moving direction of the laser light with respect to the silicon substrate and a direction of polarization of the laser light is less than 45°;
a second step of converging the elliptically-polarized laser light at the silicon substrate and moving the laser light so as to form the plurality of modified spots align in a single row along the cutting line within the silicon substrate and cause the modified region including the plurality of modified spots, such that an angle between a moving direction of the laser light with respect to the silicon substrate and a direction of polarization of the laser light is more than 45′; and
a third step of anisotropically etching the silicon substrate after the first step so as to advance an etching selectively along the modified region and form the space in the silicon substrate.