Method for the production of layers containing indium oxide

1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising:

(a) applying an anhydrous solution comprising an indium oxo alkoxide and a solvent, to obtain a substrate coated with an intermediate layer;

(b) optionally, drying the coated substrate; and

(c) converting the intermediate layer, to obtain a substrate coated with the indium oxide-comprising layer,

wherein the indium oxo alkoxide has a formula (I):

M x O y (OR) z [O(R′O) c H] a X b [R″OH] d   (I),

wherein

x is 3-25, y is 1-10, z is 3-50, a is 0-25, b is 0-20, c is 0-1, d is 0-25,

M is In,

R, R′, and R″ are each independently an organic radical, and

X is F, Cl, Br, or I.

2. The process of claim 1 , wherein the indium oxo alkoxide has a formula (II):

M x O y (OR) z   (II),

wherein

x is 3-20, y is 1-8, z is 1-25, and

OR is a C1-C15-alkoxy, a C1-C15-oxyalkylalkoxy, a C1-C15-aryloxy, or a C1-C15-oxyarylalkoxy.

3. The process of claim 2 , wherein the indium oxo alkoxide is [In 5 (μ 5 -O)(μ 3 -O i Pr) 4 (μ 2 -O i Pr) 4 (O i Pr) 5 ].

4. The process of claim 1 , wherein the indium oxo alkoxide is the sole metal oxide precursor employed.

5. The process of claim 1 , wherein a content of the indium oxo alkoxide in the anhydrous composition is 0.1 to 15% by weight, based on a total mass of the anhydrous solution.

6. The process of claim 1 , wherein the solvent is an aprotic or a weakly protic solvent.

7. The process of claim 6 , wherein the solvent is at least one selected from the group consisting of methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, tert-butanol, and toluene.

8. The process of claim 1 , wherein the anhydrous solution has a viscosity of 1 mPa·s to 10 Pa·s.

9. The process of claim 1 , wherein the substrate is selected from the group consisting of glass, silicon, silicon dioxide, a metal oxide, a transition metal oxide, a metal, and a polymeric material.

10. The process of claim 1 , wherein the applying comprises printing, spraying, rotary coating, dipping, meniscus coating, slit coating, slot-die coating, or curtain coating.

11. The process of claim 1 , wherein the converting comprises heat treating the substrate at a temperature greater than 150° C.

12. The process of claim 11 , wherein the converting further comprises, before, during, or after the heat treating, radiating the substrate with UV, IR, or VIS radiation.

13. A process for producing an electronic component, the process comprising:

forming an indium oxide-comprising layer by the process of claim 1 , on an electronic substrate,

wherein the electronic substrate is selected from the group consisting of a transistor, a diode, a sensor, and a solar cell.

14. The process of claim 1 , wherein the indium oxo alkoxide has a formula (III):

M x O y (OR) z   (III),

wherein

x is 3-15, y is 1-5, z is 10-20, and

OR is —OCH 3 , —OCH 2 CH 3 , —OCH 2 CH 2 OCH 3 , —OCH(CH 3 ) 2 , or —O(CH 3 ) 3 .

15. The process of claim 1 , wherein a content of the indium oxo alkoxide in the anhydrous solution is 1 to 10% by weight, based on a total mass of the anhydrous solution.

16. The process of claim 1 , wherein the solvent comprises ethanol.

17. The process of claim 1 , wherein the solvent comprises toluene.

18. The process of claim 1 , wherein the anhydrous solution has a viscosity of 1 mPa·s to 100 mPa·s.

19. The process of claim 1 , wherein the converting comprises heat treating the substrate at a temperature in a range of 250° C. to 360° C.