Carrier device, arrangement comprising such a carrier device, and method for patterning a layer stack comprising at least one ceramic layer

1. A method for patterning a layer stack, the method comprising:

providing a ceramic layer, which comprises at least one plated-through hole;

applying an electrically conductive layer over the ceramic layer, such that the electrically conductive layer is electrically coupled to the at least one plated-through hole;

electrolessly applying a copper layer to the electrically conductive layer, wherein the electrolessly applying the copper layer applies the copper layer laminar;

applying a photoresist to the electrically conductive layer after the electrolessly applying the copper layer;

exposing a region of the photoresist in which the electrically conductive layer is intended to be removed;

removing a non-exposed region of the photoresist, thereby uncovering the electrically conductive layer in the non-exposed region;

electrodepositing a further layer onto the electrically conductive layer in the non-exposed region and in a region of the at least one plated-through hole, wherein the further layer comprises nickel;

removing the electrically conductive layer outside the region of the at least one plated-through hole; and

applying a further conductive layer on the further layer, wherein the further conductive layer at least covers the further layer and the electrically conductive layer and also covers lateral flanks of the further layer and the electrically conductive layer.

2. The method according to claim 1 , wherein the electrically conductive layer remains in a region of the further layer during the removal.

3. The method according to claim 1 , wherein the further layer is used as an etching mask during a selective etching of the electrically conductive layer.

4. The method according to claim 1 , wherein the electrically conductive layer comprises a metal that can be etched by an etchant comprising cyanide, and wherein an etchant comprising cyanide is used for removing the electrically conductive layer.

5. The method according to claim 1 , wherein the plated-through hole electrically couples a first side of the ceramic layer and a second side lying opposite the first side.

6. The method according to claim 1 , wherein the electrically conductive layer is removed in the exposed region.

7. The method according to claim 1 , wherein the copper layer is removed in the exposed region.

8. The method according to claim 1 , wherein, depositing the at least one further layer, the exposed region of the photoresist is removed and the electrically conductive layer is thereby uncovered in the exposed region.

9. The method according to claim 1 , comprising:

applying a first layer to the ceramic layer before the electrically conductive layer is applied, wherein the first layer is resistant to an etchant and wherein the first layer has a cutout in the region of the at least one plated-through hole; and

applying a further electrically conductive layer to the ceramic layer in the region of the cutout of the first layer, such that the further electrically conductive layer is electrically coupled to the at least one plated-through hole.

10. The method according to claim 9 , wherein applying the first layer comprises printing.

11. The method according to claim 9 , wherein applying the first layer comprises applying a material comprising glass.

12. The method according to claim 1 , wherein the electrically conductive layer comprises silver.

13. The method according to claim 1 , comprising:

electrodepositing at least one further copper layer in a region of the further layer.