Photoelectrochemical cell and energy system using same
View Patent ↗A photoelectrochemical cell ( 100 ) includes: a semiconductor electrode ( 120 ) including a conductor ( 121 ) and semiconductor layers ( 122, 123 ) disposed on the conductor ( 121 ); a counter electrode ( 130 ) connected electrically to the conductor ( 121 ); an electrolyte ( 140 ) in contact with surfaces of the semiconductor layer ( 123 ) and the counter electrode ( 130 ); and a container ( 110 ) accommodating the semiconductor electrode ( 120 ), the counter electrode ( 130 ) and the electrolyte ( 140 ). A band edge level E CS of a conduction band, a band edge level E VS of a valence band, and a Fermi level E FS in a surface near-field region of the semiconductor layer, and a band edge level E CJ of a conduction band, a band edge level E VJ of a valence band, and a Fermi level E FJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, E CS −E FS >E CJ −E FJ , E FS −E VS <E FJ −E VJ , E CJ >−4.44 eV, and E VS <−5.67 eV. The Fermi level E FS in the surface near-field region of the semiconductor layer and the Fermi level E FJ in the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eV<E FS <−4.44 eV and −5.67 eV<E FJ <−4.44 eV, respectively.
1. A photoelectrochemical cell comprising:
a semiconductor electrode including a conductor and a semiconductor layer disposed on the conductor;
a counter electrode connected electrically to the conductor;
an electrolyte in contact with surfaces of the semiconductor layer and the counter electrode; and
a container accommodating the semiconductor electrode, the counter electrode and the electrolyte, wherein
a band edge level E CS of a conduction band, a band edge level E VS of a valence band, and a Fermi level E FS in a surface near-field region of the semiconductor layer, and a band edge level E CJ of a conduction band, a band edge level E VJ of a valence band, and a Fermi level E FJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, E CS −E FS >E CJ −E FJ , E FS −E VS <E FJ −E VJ , E CJ >−4.44 eV, and E VS <−5.67 eV, and
the Fermi level E FS in the surface near-field region of the semiconductor layer and the Fermi level E FJ in the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eV<E FS <−4.44 eV and −5.67 eV<E FJ <−4.44 eV, respectively, wherein
the semiconductor layer contains at least one selected from perovskite-type oxide semiconductors represented by the following general formulae A and B:
BaZr 1-x M x O 3-α (General Formula A)
where M denotes at least one element selected from trivalent elements, x denotes a numerical value of more than 0 and less than 1, and α denotes an amount of oxygen deficiency that is a numerical value of more than 0 and less than 1.5; and
BaZr x Ce y M 1-x-y O 3-α (General Formula B)
where M denotes at least one element selected from trivalent elements, x denotes a numerical value of more than 0 and less than 1, y denotes a numerical value of more than 0 and less than 1, x+y<1 is satisfied, and α denotes an amount of oxygen deficiency that is a numerical value of more than 0 and less than 1.5.
2. The photoelectrochemical cell according to claim 1 , wherein
the semiconductor layer includes first to Nth (N is an integer of 2 or more) semiconductor layers that are disposed in this order on the conductor,
when two adjacent layers selected from the first to Nth semiconductor layers are referred to as a (K−1)th (K is an integer of 2 to N) semiconductor layer and a Kth semiconductor layer from the side of the conductor, a band edge level E CK of a conduction band, a band edge level E VK of a valence band, and a Fermi level E FK of the Kth semiconductor layer, and a band edge level E C(K-1) of a conduction band, a band edge level E V(K-1) of a valence band, and a Fermi level E F(K-1) of the (K−1)th semiconductor layer satisfy, relative to the vacuum level, E CK −E FK >E C(K-1) −E F(K-1) , E FK −E VK <E F(K-1) −E V(K-1) , E C(K-1) >−4.44 eV, and E VK <−5.67 eV, and
the Fermi level E FK of the Kth semiconductor layer and the Fermi level E F(K-1) of the (K−1)th semiconductor layer satisfy, relative to the vacuum level, −5.67 eV<E FK <−4.44 eV and −5.67 eV<E F(K-1) <−4.44 eV, respectively.
3. The photoelectrochemical cell according to claim 1 , wherein the semiconductor layer includes at least two elements, and at least one of the elements in the semiconductor layer has a concentration increasing or decreasing along a thickness direction of the semiconductor layer.
4. The photoelectrochemical cell according to claim 1 , wherein the semiconductor layer is composed of at least one selected from the group consisting of oxide, nitride, and oxynitride.
5. The photoelectrochemical cell according to claim 1 , wherein the semiconductor layer contains an oxide containing barium, zirconium and indium as constituent elements, or an oxide containing barium, zirconium, cerium and indium as constituent elements.
6. The photoelectrochemical cell according to claim 1 , wherein the counter electrode is disposed on the conductor.
7. An energy system comprising:
the photoelectrochemical cell according to claim 1 ;
a hydrogen storage, connected to the photoelectrochemical cell by a first pipe, for storing hydrogen generated inside the photoelectrochemical cell; and
a fuel cell, connected to the hydrogen storage by a second pipe, for converting the hydrogen stored in the hydrogen storage into electricity.