Heterojunction oxide non-volatile memory device
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer.
1. A memory device, comprising:
a first metal layer;
a first metal oxide layer coupled to the first metal layer;
a second metal oxide layer coupled to the first metal oxide layer;
a second metal layer coupled to the second metal oxide layer;
wherein a Gibbs free energy for the formation of the first metal oxide layer is lower than the Gibbs free energy for the formation of the second metal oxide layer, and
wherein a metal in the first metal oxide layer is different from a metal in the first metal layer.
2. The memory device of claim 1 , wherein the Gibbs free energy for the formation of the first metal oxide layer is two to three times less than the Gibbs free energy for the formation of the second metal oxide layer.
3. The memory device of claim 1 , wherein the first metal oxide comprises one of: TiO 2 , Ta 2 O 5 , NiO, WO 3 , or Al 2 O 3 , and the second metal oxide layer comprises Praseodymium Calcium Manganese Oxide (PCMO).
4. The memory device of claim 1 , wherein the first metal oxide comprises Al 2 O 3 and the second metal oxide comprises Cu x O x .
5. The memory device of claim 1 , wherein the first metal oxide comprises Al 2 O 3 and the second metal oxide comprises TiO 2 .
6. The memory device of claim 1 , wherein the first metal oxide comprises a first switchable resistance and the second metal oxide comprises a second switchable resistance.
7. The memory device of claim 1 , wherein the first metal oxide layer is characterized by a first high resistance and a first low resistance and the second metal oxide layer is characterized by a second high resistance and a second low resistance and wherein the first high resistance of the first metal oxide layer is greater than the second high resistance of the second metal oxide layer and the first low resistance of the first metal oxide is substantially similar to the second high resistance of the second metal oxide layer.
8. The memory device of claim 1 , wherein the first metal oxide layer is thinner than the second metal oxide layer.
9. The memory device of claim 1 , wherein the second metal oxide layer is three to five times thicker than the first metal oxide layer.
10. A switching device; comprising:
a first memory device; the first memory device comprising:
a first metal layer;
a first metal oxide layer coupled to the first metal layer;
a second metal oxide layer coupled to the first metal oxide layer; and
a second metal layer coupled to the second metal oxide layer;
wherein a first Gibbs free energy for the formation of the first metal oxide layer is lower than a second Gibbs free energy for the formation of the second metal oxide layer, and
wherein a metal in the first metal oxide layer is different from a metal in the first metal layer; and
a second memory device coupled to the first memory device; the second memory device comprising:
a third metal layer;
a third metal oxide layer coupled to the third metal layer; and
a fourth metal layer coupled to the third metal oxide layer;
wherein a third Gibbs free energy for the formation of the third metal oxide layer is higher than the second Gibbs free energy for the formation of the second metal oxide layer, and
wherein a metal in the first metal oxide layer is different from a metal in the first metal layer.
11. The switching device of claim 10 , wherein when the switching device is characterized by three states; the three states comprising:
a first state wherein the first and second memory devices are both in a low resistive state;
a second state wherein the first memory device is in the low resistive state and the second memory device is in a high resistive state; and
a third state wherein the first memory device is in the high resistive state and the second memory device is in a low resistive state.
12. The switching device of claim 11 , wherein it can be identified whether the switching device is in the first, the second, or the third state by performing a non destructive read.
13. The switching device of claim 11 , wherein it can be identified whether the switching device is in the first, the second, or the third state by performing a destructive read and reinstalling a state after the destructive read.
14. A method, comprising:
generating a first metal layer,
coupling a first metal oxide layer to the first metal layer;
coupling a second metal oxide layer to the first metal oxide layer; and
coupling a second metal layer to the second metal oxide layer,
wherein a first Gibbs free energy for forming the first metal oxide layer is lower than a second Gibbs free energy for forming the second metal oxide layer, and
wherein a metal in the first metal oxide layer is different from a metal in the first metal layer.
15. The method of claim 14 wherein the first metal comprises one of aluminum, titanium, tantalum, gold, silver, or platinum.
16. The method of claim 14 wherein the first metal oxide layer comprises one of TiO 2 , Ta 2 O 5 , NiO, WO 3 , or Al 2 O 3 .
17. The method of claim 14 wherein the second metal oxide layer comprises Praseodymium Calcium Manganese Oxide (PCMO).
18. The method of claim 14 wherein the second metal comprises one of aluminum, titanium, tantalum, gold, silver, or platinum.
19. The method of claim 14 wherein the second Gibbs free energy is about two to three times the first Gibbs free energy.
20. The method of claim 14 wherein the second metal oxide layer is about three to five times thicker than the first metal oxide layer.