IP Library › Granted Patent US 8,659,030
Granted Patent B2
US 8,659,030 · App. 13/397,190 · Granted Feb 25, 2014

III-nitride heterojunction devices having a multilayer spacer

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Quick Facts
Patent No.
US 8,659,030
App. No.
13/397,190
Granted
Feb 25, 2014
Kind
B2
Abstract

In accordance with one implementation of the present disclosure, a III-Nitride heterojunction device includes a III-Nitride channel layer, a III-Nitride multilayer spacer situated over the III-Nitride channel layer, and a III-Nitride barrier layer situated over the III-Nitride multilayer spacer. A two-dimensional electron gas (2DEG) is formed near an interface of said III-Nitride Channel layer and said III-Nitride multilayer spacer. The III-Nitride multilayer spacer includes a III-Nitride interlayer. In one implementation, the III-Nitride multilayer spacer includes a III-Nitride polarization layer that is situated over the III-Nitride interlayer. The III-Nitride polarization layer has a higher total polarization than the III-Nitride interlayer, the III-Nitride channel layer, and the III-Nitride barrier layer.

Claims (36)

1. A III-Nitride heterojunction device comprising:

a III-Nitride channel layer, a III-Nitride multilayer spacer situated over said III-Nitride channel layer, and a III-Nitride barrier layer situated over said III-Nitride multilayer spacer; and

a two-dimensional electron gas (2DEG) formed near an interface of said III-Nitride channel layer and said III-Nitride multilayer spacer, said III-nitride barrier layer contributing to formation of said 2DEG;

said III-Nitride multilayer spacer comprising a III-Nitride interlayer.

2. The III-Nitride heterojunction device of claim 1 , wherein said III-Nitride interlayer reduces lattice mismatch between said III-Nitride multilayer space and said III-Nitride channel layer.

3. The III-Nitride heterojunction device of claim 1 , wherein said III-Nitride multilayer spacer includes a III-Nitride polarization layer.

4. The III-Nitride heterojunction device of claim 1 , wherein said III-Nitride multilayer spacer comprises a III-Nitride polarization layer that is situated over said III-Nitride interlayer.

5. The III-Nitride heterojunction device of claim 4 , wherein said III-Nitride polarization layer has a higher total polarization than said III-Nitride interlayer and said III-Nitride channel layer.

6. The III-Nitride heterojunction device of claim 4 , wherein said III-Nitride polarization layer has a higher total polarization than any layer between said III-Nitride polarization layer and said III-Nitride channel layer.

7. The III-Nitride heterojunction device of claim 4 , wherein said III-Nitride polarization layer has a larger in-plane lattice constant than said III-Nitridechannel layer.

8. The III-Nitride heterojunction device of claim 4 , wherein said III-Nitride polarization layer has a larger in-plane lattice constant than said III-Nitride barrier layer.

9. The III-Nitride heterojunction device of claim 4 , wherein said III-Nitride polarization layer comprises Al z Ga (l−z) N where z>0.5.

10. The HI-Nitride heterojunction device of claim 9 , wherein said III-Nitride barrier layer comprises Al x Ga (1−x) N where z>x.

11. The III-Nitride heterojunction device of claim 9 , wherein said III-Nitride barrier layer comprises Al x In (1−x) N.

12. The III-Nitride heterojunction device of claim 11 , wherein the lattice constant of said III-Nitride barrier layer is substantially the same as the latticeconstant of said III-Nitride channel layer.

13. The III-Nitride heterojunction device of claim 4 , wherein said Ill-Nitride polarization layer is substantially AIN.

14. The III-Nitride heterojunction device of claim 1 , wherein said 2DEG formed near said interface of said III-Nitride channel layer and said III- Nitride multilayer spacer is not interrupted.

15. The III-Nitride heterojunction device of claim 1 , wherein said 2DEG formed near said interface of said III-Nitride channel layer and said III-Nitride multilayer spacer is interrupted.

16. The III-Nitride heterojunction device of claim 1 , wherein said III-Nitride heterojunction device is selected from a group consisting of a MOSFET, a MISFET, or a Schottky gated PET.

17. A III-Nitride heterojunction device comprising:

a III-Nitride channel layer, a III-Nitride multilayer spacer situated over said III-Nitride channel layer, and a III-Nitride barrier layer situated over said III-Nitride multilayer spacer;

said III-Nitride multilayer spacer comprising a III-Nitride polarization layer that is situated over a III-Nitride interlayer; and

a two-dimensional electron gas (2DEG) formed near an interface of said III-Nitride channel layer and said III-Nitride interlayer, said III-nitride barrier layer contributing to formation of said 2DEG.

18. The III-Nitride heterojunction device of claim 17 , wherein said III-Nitride interlayer reduces lattice mismatch between said III-Nitride polarization layer and said III-Nitride channel layer.

19. The III-Nitride heterojunction device of claim 17 , whereinsaid III-Nitride interlayer is situated directly on said III-Nitride channel layer.

20. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

21. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

22. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

23. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

24. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said Ill-Nitride polarization layer.

25. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

26. The HI-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

27. The III-Nitride heterojunction device of claim 19 , wherein said III-Nitride barrier layer is situated directly on said III-Nitride polarization layer.

28. The III-Nitride heterojunction device of claim 17 , wherein said 2DEG formed near said interface of said III-Nitride channel layer and said III-Nitride multilayer spacer is not interrupted.

29. The III-Nitride heterojunction device of claim 17 , wherein said 2DEG formed near said interface of said III-Nitride channel layer and said III-Nitride multilayer spacer is interrupted.

30. The III-Nitride heterojunction device of claim 17 , wherein said III-Nitride heterojunction device is selected from a group consisting of a MOSFET, a MISFET, or a Schottky gated FET.

Assignments (1)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →