Acoustic transducer with gap-controlling geometry and method of manufacturing an acoustic transducer
A transducer of the preferred embodiment including a transducer and a plurality of adjacent, tapered cantilevered beams. Each of the beams define a beam base, a beam tip, and a beam body disposed between the beam base and the beam tip. The beams are arranged such that each of the beam tips extends toward a common area. Each beam is joined to the substrate along the beam base and is free from the substrate along the beam body. A preferred method of manufacturing a transducer can include: depositing alternating layers of piezoelectric and electrode onto the substrate in block, processing the deposited layers to define cantilever geometry in block, depositing metal traces in block, and releasing the cantilevered beams from the substrate in block.
1. A MEMS transducer comprising:
a substrate; and
a plurality of tapered, transducer beams, each tapered, transducer beam comprising a piezoelectric layer and a pair of electrode layers sandwiching the piezoelectric layer for converting applied pressure to voltage, the tapered, transducer beams each having a beam base, a beam end, and a beam body, with the beam body tapered from the beam base to the beam end and disposed between the beam base and the beam end, the tapered, transducer beams connected in a cantilever arrangement over the substrate by having the beam bases attached to the substrate, the beam ends converging towards a single point, and with each beam body free from the substrate and with each beam end free and unattached.
2. The MEMS transducer of claim 1 , wherein a gap defined along a length of adjacent tapered, transducer beams is approximately 1 micron or less.
3. The MEMS transducer of claim 1 , wherein the beam bases form a substantially continuous microphone perimeter.
4. The MEMS transducer of claim 1 , wherein the MEM transducer is a MEMS microphone, and wherein each tapered, transducer beam comprises a triangle, such that the MEMS microphone comprises a substantially polygonal perimeter.
5. The MEMS transducer of claim 1 , wherein at least two of the tapered, transducer beams are electrically coupled together in series.
6. The MEMS transducer of claim 1 , wherein the piezoelectric layer extends substantially through a width and a length of a tapered, transducer beam.
7. The MEMS transducer of claim 1 , wherein the tapered, transducer beams include two piezoelectric layers and three electrode layers.
8. The MEMS transducer of claim 1 , wherein the electrode layers of each tapered, transducer beam are electrically coupled in series by metal traces.
9. The MEMS transducer of claim 1 , wherein the piezoelectric layer comprises aluminum nitride, and the electrode layers comprise molybdenum.
10. The MEMS transducer of claim 1 , wherein the substrate comprises a plurality of conductive traces.
11. A method comprising:
depositing a first electrode layer on a substrate;
depositing a piezoelectric layer;
depositing a second electrode layer;
patterning the second electrode layer;
patterning the piezoelectric layer;
processing the deposited layers to define a plurality of tapered, transducer beams, each tapered, transducer beam comprising the piezoelectric layer and the first and second electrode layers sandwiching the piezoelectric layer for converting applied pressure to voltage, the tapered, transducer beams each having a beam base, a beam end, and a beam body, with the beam body disposed between the beam base and the beam end;
depositing metal traces;
patterning the metal traces; and
releasing the tapered, transducer beams from the substrate, with the released tapered, transducer beams connected in a cantilever arrangement over the substrate, by having the beam bases attached to the substrate, the beam ends converging towards a single point, and with each beam body free from the substrate and with each bean end free and unattached.
12. The method of claim 11 , wherein adjacent tapered, transducer beams define gaps extending through the thickness of the deposited layers.
13. The method of claim 11 , wherein a gap between adjacent tapered, transducer beams is approximately 1 micron or less.
14. The method of claim 11 , wherein the gaps are micromachined.
15. The method of claim 11 , wherein the tapered, transducer beams are defined by two intersecting, linear gaps.
16. The method of claim 11 , wherein depositing the metal traces comprises depositing a metal trace to each electrode layer.
17. The method of claim 11 , wherein releasing the tapered, transducer beams from the substrate comprises etching the substrate away from the tapered, transducer beams.
18. The method of claim 17 , wherein etching the substrate comprises deep reactive-ion etching.
19. The method of claim 11 , further comprising growing a thermal oxide layer on the substrate before depositing and patterning the piezoelectric and electrode layers.