Suspensions for protecting semiconductor materials and methods for producing semiconductor bodies
View Patent ↗A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.
1. A method of producing a semiconductor body comprising:
providing a semiconductor wafer having a separating region arranged between two chip regions, wherein the chip regions have light emitting diode structures with a semiconductor layer sequence having an outermost protection layer and an underlying metallic reflective layer, and the refractive index of the outermost layer is greater than 1,
forming a suspension layer on the semiconductor wafer from a suspension, said suspension layer protecting semiconductor material and comprising a carrier medium, inorganic particles and a plasticizer having a cooling effect during laser treatment, wherein the inorganic particles contain at least one selected from the group consisting of titanium oxide, zinc oxide, aluminum nitride, silicon nitride and boron nitride, and
separating the semiconductor wafer along the separating region with a laser.
2. The method of claim 1 , wherein the outermost protection layer and the underlying metallic reflective layer extend to the separating region, said suspension layer being in direct contact with the outermost protection layer.
3. A method of producing a semiconductor body comprising:
providing a semiconductor wafer having a separating region arranged between two chip regions, wherein the chip regions have light emitting diode structures with a semiconductor layer sequence having an outermost protection layer and an underlying metallic reflective layer, and the refractive index of the outermost layer is greater than 1,
forming a suspension layer on the semiconductor wafer from a suspension, said suspension layer protecting semiconductor material and comprising a carrier medium and inorganic particles, wherein the inorganic particles contain at least one selected from the group consisting of titanium oxide, zinc oxide, aluminum nitride, silicon nitride and boron nitride, and
separating the semiconductor wafer along the separating region with a laser.
4. The method according to claim 3 , wherein width of the chip regions is not greater than about 250 μm.
5. The method according to claim 3 , wherein the separating region is a sawing trench.
6. The method according to claim 3 , wherein the suspension layer is applied by one of spraying, spin-coating or dipping.
7. The method according to claim 3 , wherein thickness of the suspension layer is about 20 nm to about 2 μM.
8. The method of claim 3 , wherein the inorganic particles scatter and/or absorb laser light during separation.
9. The method of claim 3 , wherein the outermost layer and the underlying layer are formed in the separation region.
10. The method of claim 3 , wherein the suspension layer is cut during the separation with the laser.