IP Library Granted Patent US 8,878,116
Granted Patent B2
US 8,878,116 · App. 13/399,113 · Granted Nov 4, 2014

Method of manufacturing solid-state imaging element, solid-state imaging element and electronic apparatus

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Quick Facts
Patent No.
US 8,878,116
App. No.
13/399,113
Granted
Nov 4, 2014
Kind
B2
Abstract

A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of the opening is shaped as a flat surface; expanding the base by heating, mounting the element chip on the flat surface of the base in a state where the opening of the base is covered; and three-dimensionally curving a portion corresponding to the opening in the element chip by cooling and contracting the base in a state where the element chip is fixed to the flat surface of the expanded base.

Claims (27)

1. A method of manufacturing a solid-state imaging element comprising:

manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side;

preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which a periphery of the opening is shaped as a flat surface;

mounting the element chip on the flat surface of the base in a state where the opening of the base is covered; and

three-dimensionally curving a portion corresponding to the opening in the element chip by cooling and contracting the base in a state where the element chip is fixed to the flat surface of the expanded base.

2. The method of manufacturing a solid-state imaging element according to claim 1 , further comprising:

expanding the base by heating.

3. The method of manufacturing a solid-state imaging element according to claim 2 , further comprising:

before the mounting of the element chip, filling uncured resin inside the opening,

wherein when the element chip is mounted on the flat surface of the base, the main surface side on which the photoelectric conversion units are arranged faces upward, and

when the base is cooled and made to contract, the element chip is curved toward the opening side by curing and contraction of the resin.

4. The method of manufacturing a solid-state imaging element according to claim 2 , wherein

when the element chip is mounted on the flat surface of the base, the main surface side on which the photoelectric conversion units are arranged faces upward, and

when the base is cooled and made to contract, the inside of the opening is sealed, gas inside the opening is cooled and made to volumetrically contract, whereby the element chip is curved toward the opening side.

5. The method of manufacturing a solid-state imaging element according to claim 1 , further comprising:

on a flat surface of the base, providing a discharge groove communicating with an outside of the base,

wherein when the element chip is fixed on the flat surface of the base, the element chip is vacuum-adsorbed to the flat surface of the base by suction from the discharge groove.

6. The method of manufacturing a solid-state imaging element according to claim 1 , further comprising:

three-dimensionally curving the element chip toward the opening side by volumetrically contracting the inside of the opening of the base blocked by the element chip in a state where the element chip is fixed to the flat surface of the base.

7. The method of manufacturing a solid-state imaging element according to claim 1 , wherein gas from inside the opening is discharged when the inside of the opening is made to volumetrically contract.

8. The method of manufacturing a solid-state imaging element according to claim 6 , wherein the inner wall of the opening is formed as a concave curved surface curved three-dimensionally and the element chip made to curve three-dimensionally toward the opening side is fixed to the concave curved surface by an adhesive agent interposed between the element chip and the concave curved surface.

9. The method of manufacturing a solid-state imaging element according to claim 1 ,

wherein a discharge groove communicating with an outside of the base is provided on a flat surface of the base, and

when the element chip is fixed on the flat surface of the base, the element chip is vacuum-adsorbed to the flat surface of the base by suction from the discharge groove.

10. The solid-state imaging element according to claim 1 , further comprising:

a control unit using a suction apparatus arranged in communication with the opening of the base,

wherein the curvature of the imaging surface is controlled by controlling the suction force from the control unit.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040419/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2012
From: ITONAGA, KAZUICHIRO
To: SONY CORPORATION
Reel/Frame 028095/0239 →