Light emitting device and light emitting device package
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode. The first electrode includes a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed. A gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region.
1. A light emitting device comprising:
a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
a first electrode on the first conductive semiconductor layer;
a transparent electrode on the second conductive semiconductor layer; and
a second electrode on the transparent electrode,
wherein the first electrode comprises a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed, and
wherein a gap between the transparent electrode and the first electrode finger part is gradually narrowed along an entire length of the first electrode.
2. The light emitting device of claim 1 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is gradually narrowed from the first region toward the second region.
3. The light emitting device of claim 1 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is constantly provided from the first region toward the second region.
4. The light emitting device of claim 1 , wherein a gap between the active layer and the first electrode finger part is constantly provided from the first region toward the second region.
5. The light emitting device of claim 1 , wherein the second electrode comprises a second electrode pad in a third region and a second electrode finger part extending from the second electrode pad to a fourth region.
6. The light emitting device of claim 1 , wherein a concavo-convex pattern is formed on the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer.
7. The light emitting device of claim 6 , wherein the concavo-convex pattern is provided in vicinity of the first electrode finger part.
8. The light emitting device of claim 1 , wherein the transparent electrode comprises at least one selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, and Ni/Au.
9. The light emitting device of claim 1 , wherein the second conductive semiconductor layer exposed by the transparent electrode is interposed between the transparent electrode and the first electrode finger part.
10. A light emitting device comprising:
a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
a first electrode on the first conductive semiconductor layer;
a transparent electrode on the second conductive semiconductor layer; and
a second electrode on the transparent electrode,
wherein the first electrode comprises a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad to a second region, in which the first conductive semiconductor layer is exposed, and having a constant width,
wherein a gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region, and wherein the transparent electrode has an inverse V-shape from the first region to the second region, the gap being formed between edges of the inverse V-shape and the first electrode finger part.
11. The light emitting device of claim 10 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is gradually narrowed from the first region toward the second region.
12. The light emitting device of claim 10 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is constantly provided from the first region toward the second region.
13. The light emitting device of claim 10 , wherein a gap between the active layer and the first electrode finger part is constantly provided from the first region toward the second region.
14. The light emitting device of claim 10 , wherein a concavo-convex pattern is formed on the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer.
15. The light emitting device of claim 10 , wherein the second conductive semiconductor layer exposed by the transparent electrode is interposed between the transparent electrode and the first electrode finger part.
16. A light emitting device package comprising:
a body;
a light emitting device on the body; and
first and second lead electrodes electrically connected to the light emitting device,
wherein the light emitting device comprises a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode,
wherein the first electrode comprises a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending in a length direction from the first electrode pad to a second region, in which the first conductive semiconductor layer is exposed,
wherein a gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region,
wherein a width of the electrode pad is less than a width of the transparent electrode, and
wherein the gap between the transparent electrode and the first electrode finger part is gradually narrowed along an entire length of the first electrode.
17. The light emitting device package of claim 16 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is gradually narrowed from the first region toward the second region.
18. The light emitting device package of claim 16 , wherein a gap between the second conductive semiconductor layer and the first electrode finger part is constantly provided from the first region toward the second region.
19. The light emitting device package of claim 16 , wherein the first electrode finger part is provided with a constant width from the first region to the second region.