Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell
View Patent ↗A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.
1. A multijunction solar cell comprising:
an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction;
a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap;
a third solar subcell adjacent to said second solar subcell and having a third band gap in a range of approximately 1.3 to 1.5 eV and smaller than said second band gap;
a first graded interlayer adjacent to said third solar subcell, said first graded interlayer having a fourth band gap greater than said third band gap and that is constant at 1.5 eV throughout the thickness of the first graded interlayer; and
a fourth solar subcell adjacent to said first graded interlayer, said fourth subcell having a fifth band gap in a range of approximately 1.0 to 1.2 eV wherein said fourth subcell is lattice mismatched with respect to said third subcell;
a second graded interlayer adjacent to said fourth solar subcell, said second graded interlayer having a sixth band gap greater than said fifth band gap and that is constant at approximately 1.1 eV throughout the thickness of the second graded interlayer; and
a lower fifth solar subcell adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fifth band gap wherein said fifth subcell is lattice mismatched with respect to said fourth subcell,
wherein each of the first and second graded interlayers is composed, respectively, of a compositionally step-graded series of (In x Ga 1-x ) y Al 1-y As layers with monotonically changing lattice constant, with x and y selected such that the band gap of each interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1.
2. The multijunction solar cell of claim 1 , wherein the base of the upper first solar subcell is composed of AlGaInP and the emitter of the upper first solar subcell is composed of AlGaInP.
3. The multijunction solar cell of claim 1 , wherein the band gap of the base of the upper first solar subcell is equal to or greater than 2.05 eV.
4. The multijunction solar cell of claim 1 , wherein the emitter of the upper first solar subcell is composed of a first region in which the doping is graded from 3×10 18 to 1×10 18 free carriers per cubic centimeter, and a second region directly disposed over the first region in which the doping is constant at 1×10 17 free carriers per cubic centimeter.
5. The multijunction solar cell of claim 4 , wherein the first region of the emitter of the upper first solar subcell is directly adjacent to a window layer.
6. The multijunction solar cell of claim 1 , wherein the emitter of the upper first solar subcell has a thickness of 80 nm.
7. The multijunction solar cell of claim 1 , further comprising a spacer layer between the emitter and the base of the upper first solar subcell.
8. The multijunction solar cell of claim 1 , wherein a spacer layer between the emitter and the base of the upper first solar subcell is composed of unintentionally doped AlGaInP.
9. The multijunction solar cell of claim 1 , wherein the base of the upper first solar subcell has a thickness of less than 400 nm.
10. The multijunction solar cell of claim 1 , wherein the base of the upper first solar subcell has a thickness of 260 nm.
11. The multijunction solar cell of claim 1 , wherein the emitter section of the upper first solar subcell has a first region in which the doping is graded, and a second region directly disposed over the first region in which the doping is constant.
12. The multijunction solar cell of claim 11 , wherein the second region is thicker than the first region.
13. The multijunction solar cell as defined in claim 1 , wherein the upper subcell is composed of an AlGaInP emitter layer and an InGaAlP base layer, the second subcell is composed of AlGaAs emitter layer and a AlGaAs base layer, the third subcell is composed of a GaInP emitter layer and a GaAs base layer, the fourth subcell is composed of a GaInAs emitter layer and a GaInAs base layer, and the bottom fifth subcell is composed of a GaInAs emitter layer and a GaInAs base layer.
14. A multijunction solar cell comprising:
an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction;
a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap;
a third solar subcell adjacent to said second solar subcell and having a third band gap in a range of approximately 1.3 to 1.5 eV and smaller than said second band gap;
a first graded interlayer adjacent to said third solar subcell, said first graded interlayer having a fourth band gap greater than said third band gap and that is constant at 1.5 eV throughout the thickness of the first graded interlayer; and
a fourth solar subcell adjacent to said first graded interlayer, said fourth subcell having a fifth band gap in a range of approximately 1.0 to 1.2 eV wherein said fourth subcell is lattice mismatched with respect to said third subcell;
a second graded interlayer adjacent to said fourth solar subcell, said second graded interlayer having a sixth band gap that is constant throughout the thickness of the second graded interlayer and greater than said fifth band gap;
a fifth solar subcell adjacent to said second graded interlayer, said fifth subcell having a seventh band gap in a range of approximately 0.85 to 0.95 eV wherein said fifth subcell is lattice mismatched with respect to said fourth subcell;
a third graded interlayer adjacent to said fifth solar subcell, said third graded interlayer having a eighth band gap that is constant throughout the thickness of the third graded interlayer; and
a lower sixth solar subcell adjacent to said third graded interlayer, said lower sixth subcell having a ninth band gap in a range of approximately 0.60 to 0.70 eV wherein said sixth subcell is lattice mismatched with respect to said fifth subcell,
wherein each of the graded interlayers is composed of a compositionally step-graded series of (In x Ga 1-x ) y Al 1-y As layers with monotonically changing lattice constant, with x and y selected such that the band gap of each interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1.
15. A method of manufacturing a solar cell comprising:
providing a first substrate;
forming an upper first solar subcell having a first band gap on said first substrate;
forming a second solar sub cell adjacent to said first solar subcell and having a second band gap smaller than said first band gap;
forming a third solar subcell adjacent to said first solar subcell and having a third band gap in a range of approximately 1.3 to 1.5 eV and smaller than said first band gap;
forming a first graded interlayer adjacent to said second solar subcell, said first graded interlayer having a fourth band gap greater than said third band gap and that is constant at 1.5 eV throughout the thickness of the first graded interlayer;
forming a fourth solar subcell adjacent to said first graded interlayer, said fourth subcell having a fifth band gap in a range of approximately 1.0 to 1.2 eV wherein said fourth subcell is lattice mismatched with respect to said third subcell;
forming a second graded interlayer adjacent to said fourth solar subcell, said second graded interlayer having a sixth band gap greater than said fifth band gap and that is constant at approximately 1.1 eV throughout the thickness of the second graded interlayer;
forming a lower fifth solar subcell adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fourth band gap wherein said fifth subcell is lattice mismatched with respect to said fourth subcell;
mounting a surrogate substrate on top of fourth solar subcell; and
removing the first substrate,
wherein each of the first and second graded interlayers is composed of a compositionally step-graded series of (In x Ga 1-x ) y Al 1-y As layers with monotonically changing lattice constant, with x and y selected such that the band gap of each interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1.
16. The multijunction solar cell of claim 1 , further comprising a barrier layer adjacent at least one of the first or second graded interlayers.
17. The multijunction solar cell of claim 1 wherein the first graded interlayer is disposed between first and second barrier layers that are adjacent to the first graded interlayer.
18. The multijunction solar cell of claim 17 wherein the first barrier layer has a different composition from the second barrier layer.
19. The multijunction solar cell of claim 1 wherein the second graded interlayer is disposed between first and second barrier layers that are adjacent to the second graded interlayer.
20. The multijunction solar cell of claim 19 wherein the first barrier layer has a different composition from the second barrier layer.
21. The multijunction solar cell of claim 16 wherein the barrier layer is composed of (Al)GaInP.