Use of capacitance to analyze polycrystalline diamond

1. A capacitance measuring system, comprising:

a capacitance measuring device comprising a positive terminal and a negative terminal;

a leached polycrystalline diamond compact cutter comprising a polycrystalline structure and a substructure, the polycrystalline structure comprising a leached layer and an unleached layer positioned adjacent to the leached layer, the leached layer having at least a portion of a catalyst material removed from therein;

a first conducting component for contacting a first surface of the leached polycrystalline diamond compact cutter;

a first wire for electrically coupling the positive terminal to the first conducting component;

a second conducting component for contacting a second surface of the leached polycrystalline diamond compact cutter, the second surface being positioned opposite of the first surface;

a second wire for electrically coupling the negative terminal to the second conducting component; and

a press for firmly engaging the conducting components with the respective surfaces to form a circuit,

wherein the capacitance measuring device is operable to measure a capacitance of the leached polycrystalline diamond compact cutter via the circuit.

2. The capacitance measuring system of claim 1 , wherein the capacitance measuring device comprises a multi-meter.

3. The capacitance measuring system of claim 1 , wherein the first conducting component and the second conducting component are substantially similar in size and shape.

4. The capacitance measuring system of claim 1 , wherein each conducting component is deformable for adapting to the respective surface.

5. The capacitance measuring system of claim 1 , further comprising:

a first insulating component for positioning between the first conducting component and an upper plate of the press; and

a second insulating component for positioning between the second conducting component and a base plate of the press.

6. The capacitance measuring system of claim 1 , wherein the leached layer has at least a portion of a by-product material removed from therein.

7. A method of characterizing a quality of a polycrystalline structure, comprising:

obtaining a batch of leached components, each leached component comprising a polycrystalline structure, each polycrystalline structure comprising a leached layer and an unleached layer positioned adjacent to the leached layer, each leached layer having at least a portion of a catalyst material removed from therein;

destructively testing a plurality of the leached components from the batch to obtain calibration data of actual leaching depths;

measuring a capacitance value of an intact leached component from the batch; and

determining an estimated leaching depth of the intact leached component using the measured capacitance value and the calibration data.

8. The method of claim 7 , further comprising obtaining a calibration curve from the calibration data, wherein the calibration curve is used to determine the estimated leaching depth.

9. The method of claim 7 , wherein:

multiple capacitance values are measured for the intact leached component,

the method further comprises determining an average of the multiple measured values, and

the average is used to determine the estimated leaching depth.

10. The method of claim 7 , further comprising depolarizing the intact leached component.

11. The method of claim 10 , wherein depolarizing the intact leached component is performed in at least one of before measuring the capacitance value and after measuring the capacitance value.

12. The method of claim 10 , wherein depolarizing the intact leached component comprises at least one of grounding the leached component, wrapping the leached component in a depolarizing material, heat treating the leached component, placing the leached component in a salt solution, and waiting a period of time.

13. The method of claim 7 , further comprising cleaning the polycrystalline structure of the intact leached component from one or more by-product materials, wherein the by-product materials were deposited within the polycrystalline structure during a leaching process that removes at least a portion of the catalyst material from therein and forms the leached component.

14. The method of claim 7 , wherein:

a plurality of capacitance values are measured for the intact leached component, and

the method further comprises:

measuring a plurality of capacitance values of a second intact leached component form the batch; and

using the pluralities of measured capacitance values to determine a second quality of microstructures of the polycrystalline structures of the intact leached components.

15. The method of claim 14 , further comprising:

determining a data scattering range for each of the intact leached components from the plurality of measured capacitance values,

wherein:

the second quality is determined using the data scattering ranges, and

the microstructure being less porous when the data scattering range is less in comparison to the data scattering range of the other intact leached component.

16. The method of claim 7 , wherein the leached layer of the intact leached component has at least a portion of a by-product material removed from therein.

17. The method of claim 7 , further comprising:

measuring capacitance values of the rest of the intact leached components in the batch;

determining estimated leaching depths of the rest of the intact leached components using the respective measured capacitance values and the calibration data;

selecting acceptable intact leached components using the estimated leaching depths; and

mounting at least a portion of the acceptable intact leached components to a tool.

18. The method of claim 7 , wherein the destructive testing comprises:

cutting each leached component;

polishing a cut edge of each cut component; and

visually measuring the actual leaching depth of each polished edge using a magnifying device.